Influence of strain, surface diffusion and Ostwald ripening on the evolution of nanostructures for erbium on Si(001)

Lena Fitting; M. C. Zeman; W. C. Yang; R. J. Nemanich

doi:10.1063/1.1557787

Influence of strain, surface diffusion and Ostwald ripening on the evolution of nanostructures for erbium on Si(001)

Lena Fitting, M. C. Zeman, W. C. Yang, R. J. Nemanich

Department of Physics

North Carolina State University

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Influence of strain, surface diffusion and Ostwald ripening on the evolution of nanostructures for erbium on Si(001) was discussed. Ultraviolet photoelectron emission microscopy was employed to study the real time growth process of individual erbium silicide nanostructures on Si(001) surfaces at temperatures up to 1050 °C. A temperature regime was indicated by the results obtained where island growth is mainly governed by surface diffusion of the deposited Er adatoms and a higher temperature regime where Ostwald ripening contributes to the island morphology.

Original language	English
Pages (from-to)	4180-4184
Number of pages	5
Journal	Journal of Applied Physics
Volume	93
Issue number	7
DOIs	https://doi.org/10.1063/1.1557787
State	Published - 1 Apr 2003

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abstract = "Influence of strain, surface diffusion and Ostwald ripening on the evolution of nanostructures for erbium on Si(001) was discussed. Ultraviolet photoelectron emission microscopy was employed to study the real time growth process of individual erbium silicide nanostructures on Si(001) surfaces at temperatures up to 1050 °C. A temperature regime was indicated by the results obtained where island growth is mainly governed by surface diffusion of the deposited Er adatoms and a higher temperature regime where Ostwald ripening contributes to the island morphology.",

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AB - Influence of strain, surface diffusion and Ostwald ripening on the evolution of nanostructures for erbium on Si(001) was discussed. Ultraviolet photoelectron emission microscopy was employed to study the real time growth process of individual erbium silicide nanostructures on Si(001) surfaces at temperatures up to 1050 °C. A temperature regime was indicated by the results obtained where island growth is mainly governed by surface diffusion of the deposited Er adatoms and a higher temperature regime where Ostwald ripening contributes to the island morphology.

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Influence of strain, surface diffusion and Ostwald ripening on the evolution of nanostructures for erbium on Si(001)

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