TY - JOUR
T1 - InGaAs/GaAsP/AlGaAs, deep-well, quantum-cascade light-emitting structures grown by metalorganic chemical vapor deposition
AU - Xu, D. P.
AU - D'Souza, M.
AU - Shin, J. C.
AU - Mawst, L. J.
AU - Botez, D.
PY - 2008/4
Y1 - 2008/4
N2 - InGaAs/GaAsP/AlGaAs strain-compensated, deep-well quantum-cascade (QC) structures have been grown by low-pressure metalorganic chemical vapor deposition (MOCVD). The structures were evaluated by high-resolution X-ray diffraction (HRXRD), transmission electron microscopy (TEM), and fabricated into narrow-ridge QC light emitters for electroluminescence characterization. The HRXRD patterns and cross-sectional TEM images show that well-controlled InGaAs/GaAsP/AlGaAs QC structures can be achieved via MOCVD growth. To characterize highly strained InGaAs quantum wells (QWs) two approaches were taken: (1) In0.3Ga0.7As/Al0.8Ga0.2As resonant tunneling diodes (RTDs) were fabricated, which demonstrated high peak-to-valley ratios (∼3) at room temperature (RT) and (2) In0.3Ga0.7As/Al0.7Ga0.3As QW infrared (IR) absorption samples were designed and grown, which, demonstrated narrow (24 meV full-width at half-maximum-(FWHM)) absorption spectra at RT. By lowering the growth temperature to 580 °C, high-quality X-ray spectra and RTD action were obtained from the In0.4Ga0.6As/Al0.8Ga0.2As structures proposed to be used for QC -laser emission in the 4-5 μm range. Narrow-ridge QC structures demonstrated narrow-linewidth electroluminescence spectra indicative of optical gain at 6.7 μm.
AB - InGaAs/GaAsP/AlGaAs strain-compensated, deep-well quantum-cascade (QC) structures have been grown by low-pressure metalorganic chemical vapor deposition (MOCVD). The structures were evaluated by high-resolution X-ray diffraction (HRXRD), transmission electron microscopy (TEM), and fabricated into narrow-ridge QC light emitters for electroluminescence characterization. The HRXRD patterns and cross-sectional TEM images show that well-controlled InGaAs/GaAsP/AlGaAs QC structures can be achieved via MOCVD growth. To characterize highly strained InGaAs quantum wells (QWs) two approaches were taken: (1) In0.3Ga0.7As/Al0.8Ga0.2As resonant tunneling diodes (RTDs) were fabricated, which demonstrated high peak-to-valley ratios (∼3) at room temperature (RT) and (2) In0.3Ga0.7As/Al0.7Ga0.3As QW infrared (IR) absorption samples were designed and grown, which, demonstrated narrow (24 meV full-width at half-maximum-(FWHM)) absorption spectra at RT. By lowering the growth temperature to 580 °C, high-quality X-ray spectra and RTD action were obtained from the In0.4Ga0.6As/Al0.8Ga0.2As structures proposed to be used for QC -laser emission in the 4-5 μm range. Narrow-ridge QC structures demonstrated narrow-linewidth electroluminescence spectra indicative of optical gain at 6.7 μm.
KW - A3. Metalorganic chemical vapor deposition
KW - B2. Semiconducting III-V materials
KW - B3. Mid-infrared light-emitting semiconductor devices
UR - http://www.scopus.com/inward/record.url?scp=41449085139&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2007.11.218
DO - 10.1016/j.jcrysgro.2007.11.218
M3 - Article
AN - SCOPUS:41449085139
SN - 0022-0248
VL - 310
SP - 2370
EP - 2376
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 7-9
ER -