Abstract
The (Ga1-x Mnx)N nanorods were grown on Al2O3 (0001) substrates by using rf-associated molecular beam epitaxy. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and selected-area diffraction pattern (SADP) results showed that the (Ga1-x Mnx)N nanorods had (0001) preferential orientations. XRD patterns showed that the (Ga1-x Mnx)N nanorods contained a small number of grains with different preferred orientations. High-resolution TEM (HRTEM) images showed that the (Ga1-x Mnx)N nanorods consisted of different preferentially oriented grains. The initial formation mechanisms for the (Ga1-x Mnx)N nanorods grown on Al2O3 (0001) substrates are described on the basis of the XRD, the TEM, the SADP, and the HRTEM results.
Original language | English |
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Pages (from-to) | 3275-3280 |
Number of pages | 6 |
Journal | Journal of Materials Research |
Volume | 23 |
Issue number | 12 |
DOIs | |
State | Published - Dec 2008 |