Initial formation mechanisms of (Ga1-x Mnx)N nanorods grown on Al2O3 (0001) substrates

K. H. Lee, J. Y. Lee, H. C. Jeon, T. W. Kang, H. Y. Kwon, T. W. Kim

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The (Ga1-x Mnx)N nanorods were grown on Al2O3 (0001) substrates by using rf-associated molecular beam epitaxy. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and selected-area diffraction pattern (SADP) results showed that the (Ga1-x Mnx)N nanorods had (0001) preferential orientations. XRD patterns showed that the (Ga1-x Mnx)N nanorods contained a small number of grains with different preferred orientations. High-resolution TEM (HRTEM) images showed that the (Ga1-x Mnx)N nanorods consisted of different preferentially oriented grains. The initial formation mechanisms for the (Ga1-x Mnx)N nanorods grown on Al2O3 (0001) substrates are described on the basis of the XRD, the TEM, the SADP, and the HRTEM results.

Original languageEnglish
Pages (from-to)3275-3280
Number of pages6
JournalJournal of Materials Research
Volume23
Issue number12
DOIs
StatePublished - Dec 2008

Fingerprint

Dive into the research topics of 'Initial formation mechanisms of (Ga1-x Mnx)N nanorods grown on Al2O3 (0001) substrates'. Together they form a unique fingerprint.

Cite this