Initial formation mechanisms of (Ga1-x Mnx)N nanorods grown on Al2O3 (0001) substrates

K. H. Lee; J. Y. Lee; H. C. Jeon; T. W. Kang; H. Y. Kwon; T. W. Kim

doi:10.1557/jmr.2008.0408

Initial formation mechanisms of (Ga_1-x Mn_x)N nanorods grown on Al₂O₃ (0001) substrates

K. H. Lee
, J. Y. Lee
, H. C. Jeon
, T. W. Kang
, H. Y. Kwon
, T. W. Kim

College of Engineering

Korea Advanced Institute of Science and Technology
Dongguk University
Hanyang University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The (Ga_1-x Mn_x)N nanorods were grown on Al₂O₃ (0001) substrates by using rf-associated molecular beam epitaxy. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and selected-area diffraction pattern (SADP) results showed that the (Ga_1-x Mn_x)N nanorods had (0001) preferential orientations. XRD patterns showed that the (Ga_1-x Mn_x)N nanorods contained a small number of grains with different preferred orientations. High-resolution TEM (HRTEM) images showed that the (Ga_1-x Mn_x)N nanorods consisted of different preferentially oriented grains. The initial formation mechanisms for the (Ga_1-x Mn_x)N nanorods grown on Al₂O₃ (0001) substrates are described on the basis of the XRD, the TEM, the SADP, and the HRTEM results.

Original language	English
Pages (from-to)	3275-3280
Number of pages	6
Journal	Journal of Materials Research
Volume	23
Issue number	12
DOIs	https://doi.org/10.1557/jmr.2008.0408
State	Published - Dec 2008

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title = "Initial formation mechanisms of (Ga1-x Mnx)N nanorods grown on Al2O3 (0001) substrates",

abstract = "The (Ga1-x Mnx)N nanorods were grown on Al2O3 (0001) substrates by using rf-associated molecular beam epitaxy. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and selected-area diffraction pattern (SADP) results showed that the (Ga1-x Mnx)N nanorods had (0001) preferential orientations. XRD patterns showed that the (Ga1-x Mnx)N nanorods contained a small number of grains with different preferred orientations. High-resolution TEM (HRTEM) images showed that the (Ga1-x Mnx)N nanorods consisted of different preferentially oriented grains. The initial formation mechanisms for the (Ga1-x Mnx)N nanorods grown on Al2O3 (0001) substrates are described on the basis of the XRD, the TEM, the SADP, and the HRTEM results.",

author = "Lee, \{K. H.\} and Lee, \{J. Y.\} and Jeon, \{H. C.\} and Kang, \{T. W.\} and Kwon, \{H. Y.\} and Kim, \{T. W.\}",

year = "2008",

month = dec,

doi = "10.1557/jmr.2008.0408",

language = "English",

volume = "23",

pages = "3275--3280",

journal = "Journal of Materials Research",

issn = "0884-2914",

publisher = "Springer International Publishing AG",

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TY - JOUR

T1 - Initial formation mechanisms of (Ga1-x Mnx)N nanorods grown on Al2O3 (0001) substrates

AU - Lee, K. H.

AU - Lee, J. Y.

AU - Jeon, H. C.

AU - Kang, T. W.

AU - Kwon, H. Y.

AU - Kim, T. W.

PY - 2008/12

Y1 - 2008/12

N2 - The (Ga1-x Mnx)N nanorods were grown on Al2O3 (0001) substrates by using rf-associated molecular beam epitaxy. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and selected-area diffraction pattern (SADP) results showed that the (Ga1-x Mnx)N nanorods had (0001) preferential orientations. XRD patterns showed that the (Ga1-x Mnx)N nanorods contained a small number of grains with different preferred orientations. High-resolution TEM (HRTEM) images showed that the (Ga1-x Mnx)N nanorods consisted of different preferentially oriented grains. The initial formation mechanisms for the (Ga1-x Mnx)N nanorods grown on Al2O3 (0001) substrates are described on the basis of the XRD, the TEM, the SADP, and the HRTEM results.

AB - The (Ga1-x Mnx)N nanorods were grown on Al2O3 (0001) substrates by using rf-associated molecular beam epitaxy. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and selected-area diffraction pattern (SADP) results showed that the (Ga1-x Mnx)N nanorods had (0001) preferential orientations. XRD patterns showed that the (Ga1-x Mnx)N nanorods contained a small number of grains with different preferred orientations. High-resolution TEM (HRTEM) images showed that the (Ga1-x Mnx)N nanorods consisted of different preferentially oriented grains. The initial formation mechanisms for the (Ga1-x Mnx)N nanorods grown on Al2O3 (0001) substrates are described on the basis of the XRD, the TEM, the SADP, and the HRTEM results.

UR - https://www.scopus.com/pages/publications/58049197846

U2 - 10.1557/jmr.2008.0408

DO - 10.1557/jmr.2008.0408

M3 - Article

AN - SCOPUS:58049197846

SN - 0884-2914

VL - 23

SP - 3275

EP - 3280

JO - Journal of Materials Research

JF - Journal of Materials Research

IS - 12

ER -

Initial formation mechanisms of (Ga_1-x Mn_x)N nanorods grown on Al₂O₃ (0001) substrates

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