Ink-jet-printed zinctinoxide thin-film transistors and circuits with rapid thermal annealing process

Yong Hoon Kim; Kwang Ho Kim; Min Suk Oh; Hyun Jae Kim; Jeong In Han; Min Koo Han; Sung Kyu Park

doi:10.1109/LED.2010.2051404

Ink-jet-printed zinctinoxide thin-film transistors and circuits with rapid thermal annealing process

Yong Hoon Kim, Kwang Ho Kim, Min Suk Oh, Hyun Jae Kim, Jeong In Han, Min Koo Han, Sung Kyu Park

Department of Chemical and Biochemical Engineering

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

We report on high-performance ink-jet-printed amorphous zinctinoxide (α-ZTO) thin-film transistors (TFTs) and simple inverter circuits. The solution-processed α-ZTO layer was directly printed on source/drain electrodes and then thermally treated by using rapid thermal annealing process. The ink-jet-printed α-ZTO TFTs (W/L =100μm/10\μm) have shown a carrier mobility of 4.98 cm²Vs with an on/off current ratio that is greater than 10⁹ and a subthreshold slope of 0.92 V/dec. The α-ZTO TFT-based inverter operation was good with acceptable logic level conservation.

Original language	English
Article number	5503990
Pages (from-to)	836-838
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	8
DOIs	https://doi.org/10.1109/LED.2010.2051404
State	Published - Aug 2010

Keywords

Ink-jet printing
rapid thermal annealing
thin-film transistor
zinc-tin-oxide

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10.1109/LED.2010.2051404

Cite this

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title = "Ink-jet-printed zinctinoxide thin-film transistors and circuits with rapid thermal annealing process",

abstract = "We report on high-performance ink-jet-printed amorphous zinctinoxide (α-ZTO) thin-film transistors (TFTs) and simple inverter circuits. The solution-processed α-ZTO layer was directly printed on source/drain electrodes and then thermally treated by using rapid thermal annealing process. The ink-jet-printed α-ZTO TFTs (W/L =100μm/10\μm) have shown a carrier mobility of 4.98 cm2Vs with an on/off current ratio that is greater than 109 and a subthreshold slope of 0.92 V/dec. The α-ZTO TFT-based inverter operation was good with acceptable logic level conservation.",

keywords = "Ink-jet printing, rapid thermal annealing, thin-film transistor, zinc-tin-oxide",

author = "Kim, {Yong Hoon} and Kim, {Kwang Ho} and Oh, {Min Suk} and Kim, {Hyun Jae} and Han, {Jeong In} and Han, {Min Koo} and Park, {Sung Kyu}",

year = "2010",

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doi = "10.1109/LED.2010.2051404",

language = "English",

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AU - Kim, Yong Hoon

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AU - Oh, Min Suk

AU - Kim, Hyun Jae

AU - Han, Jeong In

AU - Han, Min Koo

AU - Park, Sung Kyu

PY - 2010/8

Y1 - 2010/8

N2 - We report on high-performance ink-jet-printed amorphous zinctinoxide (α-ZTO) thin-film transistors (TFTs) and simple inverter circuits. The solution-processed α-ZTO layer was directly printed on source/drain electrodes and then thermally treated by using rapid thermal annealing process. The ink-jet-printed α-ZTO TFTs (W/L =100μm/10\μm) have shown a carrier mobility of 4.98 cm2Vs with an on/off current ratio that is greater than 109 and a subthreshold slope of 0.92 V/dec. The α-ZTO TFT-based inverter operation was good with acceptable logic level conservation.

AB - We report on high-performance ink-jet-printed amorphous zinctinoxide (α-ZTO) thin-film transistors (TFTs) and simple inverter circuits. The solution-processed α-ZTO layer was directly printed on source/drain electrodes and then thermally treated by using rapid thermal annealing process. The ink-jet-printed α-ZTO TFTs (W/L =100μm/10\μm) have shown a carrier mobility of 4.98 cm2Vs with an on/off current ratio that is greater than 109 and a subthreshold slope of 0.92 V/dec. The α-ZTO TFT-based inverter operation was good with acceptable logic level conservation.

KW - Ink-jet printing

KW - rapid thermal annealing

KW - thin-film transistor

KW - zinc-tin-oxide

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Ink-jet-printed zinctinoxide thin-film transistors and circuits with rapid thermal annealing process

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