TY - JOUR
T1 - Inorganic p-Type Tellurium-Based Synaptic Transistors
T2 - Complementary Synaptic Pairs with n-Type Devices for Energy-Efficient Operation
AU - Lee, Seung Min
AU - Park, Ji Min
AU - Ahn, Suhyeon
AU - Jang, Seong Cheol
AU - Kim, Hyungjin
AU - Kim, Hyun Suk
N1 - Publisher Copyright:
© 2024 American Chemical Society.
PY - 2024/7/23
Y1 - 2024/7/23
N2 - Neuromorphic computing is a rapidly emerging technology that can overcome the limitations of von Neumann-type architecture-based computing systems, offering the potential for implementing next-generation computing architectures. Here, we propose a p-type three-terminal synaptic device that successfully mimics the function of biological synapses. The proposed tellurium (Te) synaptic transistors incorporating SiO2 or Al2O3 gate dielectric layers modulate the synaptic weight─that is, the channel conductance─essential for realizing synaptic characteristics. Synaptic devices with optimal Al2O3 layers exhibit large hysteresis properties that efficiently induce conductance modulation, demonstrating low power consumption, good linearity, and short-/long-term plasticity. Furthermore, the proposed optimal Te synaptic transistor achieved a high recognition accuracy of 93.8%. These findings suggest that Te-based synaptic devices fabricated utilizing thin-film processes could enhance the efficiency of future neuromorphic computing systems.
AB - Neuromorphic computing is a rapidly emerging technology that can overcome the limitations of von Neumann-type architecture-based computing systems, offering the potential for implementing next-generation computing architectures. Here, we propose a p-type three-terminal synaptic device that successfully mimics the function of biological synapses. The proposed tellurium (Te) synaptic transistors incorporating SiO2 or Al2O3 gate dielectric layers modulate the synaptic weight─that is, the channel conductance─essential for realizing synaptic characteristics. Synaptic devices with optimal Al2O3 layers exhibit large hysteresis properties that efficiently induce conductance modulation, demonstrating low power consumption, good linearity, and short-/long-term plasticity. Furthermore, the proposed optimal Te synaptic transistor achieved a high recognition accuracy of 93.8%. These findings suggest that Te-based synaptic devices fabricated utilizing thin-film processes could enhance the efficiency of future neuromorphic computing systems.
KW - high-k dielectric constant
KW - neuromorphic computing
KW - oxide gate dielectric
KW - synaptic transistors
KW - tellurium
KW - thin film
UR - http://www.scopus.com/inward/record.url?scp=85197416069&partnerID=8YFLogxK
U2 - 10.1021/acsaelm.4c01027
DO - 10.1021/acsaelm.4c01027
M3 - Article
AN - SCOPUS:85197416069
SN - 2637-6113
VL - 6
SP - 5371
EP - 5378
JO - ACS Applied Electronic Materials
JF - ACS Applied Electronic Materials
IS - 7
ER -