Inorganic p-Type Tellurium-Based Synaptic Transistors: Complementary Synaptic Pairs with n-Type Devices for Energy-Efficient Operation

Seung Min Lee, Ji Min Park, Suhyeon Ahn, Seong Cheol Jang, Hyungjin Kim, Hyun Suk Kim

Research output: Contribution to journalArticlepeer-review

Abstract

Neuromorphic computing is a rapidly emerging technology that can overcome the limitations of von Neumann-type architecture-based computing systems, offering the potential for implementing next-generation computing architectures. Here, we propose a p-type three-terminal synaptic device that successfully mimics the function of biological synapses. The proposed tellurium (Te) synaptic transistors incorporating SiO2 or Al2O3 gate dielectric layers modulate the synaptic weight─that is, the channel conductance─essential for realizing synaptic characteristics. Synaptic devices with optimal Al2O3 layers exhibit large hysteresis properties that efficiently induce conductance modulation, demonstrating low power consumption, good linearity, and short-/long-term plasticity. Furthermore, the proposed optimal Te synaptic transistor achieved a high recognition accuracy of 93.8%. These findings suggest that Te-based synaptic devices fabricated utilizing thin-film processes could enhance the efficiency of future neuromorphic computing systems.

Original languageEnglish
Pages (from-to)5371-5378
Number of pages8
JournalACS Applied Electronic Materials
Volume6
Issue number7
DOIs
StatePublished - 23 Jul 2024

Keywords

  • high-k dielectric constant
  • neuromorphic computing
  • oxide gate dielectric
  • synaptic transistors
  • tellurium
  • thin film

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