@inproceedings{a6c0c6237d524431a1dffe545f866c1d,
title = "InP FinFETs with damage-free and record high-aspect-ratio (45:1) fins fabricated by metal-assisted chemical etching",
abstract = "Damage-free metal-assisted chemical etching (MacEtch) was used to fabricate InP junctionless FinFETs with ultra-high aspect ratio (∼ 45:1) fins. For devices with Lg = 560 nm, 20 - 32 nm fin width, and 600 nm active fin height, Ion/Ioff ∼ 106, and near-ideal subthreshold swing (70 mV/dec) were achieved.",
keywords = "Arrays, Etching, Gold, Hafnium, III-V semiconductor materials, Indium phosphide, Logic gates",
author = "Yi Song and Mohseni, {Parsian K.} and Kim, {Seung Hyun} and Shin, {Jae Cheol} and Chen Zhang and Kelson Chabak and Xiuling Li",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 73rd Annual Device Research Conference, DRC 2015 ; Conference date: 21-06-2015 Through 24-06-2015",
year = "2015",
month = aug,
day = "3",
doi = "10.1109/DRC.2015.7175665",
language = "English",
series = "Device Research Conference - Conference Digest, DRC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "253--254",
booktitle = "73rd Annual Device Research Conference, DRC 2015",
address = "United States",
}