(In1-xMnx)As diluted diluted magnetic semiconductor quantum dots with above room ferromagnetic transition temperature

Hee Chang Jeon, Youn Seek Jeong, Kwang Jae Chung, Kwang Jo Chung, Tae Won Kang, Tae Whan Kim, Wanho Jhe, Se Ahn Song

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We present a new type of (In1-xMnx)As DMS QD (quantum dot) which successfully grown by using MBE and whose Tc, was above room temperature. A high-resolution TEM image shows that the formed (In1-xMnx)As QDs are single crystals without defects, dislocations, or stacking faults, and this behavior is similar to the typical self-assembled III-V QDs. The average width of the (In1-xMnx)As QDs is approximately 60 nm. The EDX spectrum demonstrates that the stoichiomehy of the QDs is (In1-xMnx)As and that the ratio between the In and the Mn compositions is 84:16.

Original languageEnglish
Title of host publicationMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages15-16
Number of pages2
ISBN (Electronic)0780375815, 9780780375819
DOIs
StatePublished - 2002
Event12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States
Duration: 15 Sep 200220 Sep 2002

Publication series

NameMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Conference

Conference12th International Conference on Molecular Beam Epitaxy, MBE 2002
Country/TerritoryUnited States
CitySan Francisco
Period15/09/0220/09/02

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