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(In1-xMnx)As diluted diluted magnetic semiconductor quantum dots with above room ferromagnetic transition temperature

  • Hee Chang Jeon
  • , Youn Seek Jeong
  • , Kwang Jae Chung
  • , Kwang Jo Chung
  • , Tae Won Kang
  • , Tae Whan Kim
  • , Wanho Jhe
  • , Se Ahn Song

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We present a new type of (In1-xMnx)As DMS QD (quantum dot) which successfully grown by using MBE and whose Tc, was above room temperature. A high-resolution TEM image shows that the formed (In1-xMnx)As QDs are single crystals without defects, dislocations, or stacking faults, and this behavior is similar to the typical self-assembled III-V QDs. The average width of the (In1-xMnx)As QDs is approximately 60 nm. The EDX spectrum demonstrates that the stoichiomehy of the QDs is (In1-xMnx)As and that the ratio between the In and the Mn compositions is 84:16.

Original languageEnglish
Title of host publicationMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages15-16
Number of pages2
ISBN (Electronic)0780375815, 9780780375819
DOIs
StatePublished - 2002
Event12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States
Duration: 15 Sep 200220 Sep 2002

Publication series

NameMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Conference

Conference12th International Conference on Molecular Beam Epitaxy, MBE 2002
Country/TerritoryUnited States
CitySan Francisco
Period15/09/0220/09/02

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