(In1-xMnx)As diluted magnetic semiconductor quantum dots with above room temperature ferromagnetic transition

Hee Chang Jeon; Youn Seok Jeong; Tae Won Kang; Tae Whan Kim; Kwang Jae Chung; Kwang Jo Chung; Wonhc Jhe; Se Ahn Song

doi:10.1002/1521-4095(20021203)14:23<1725::AID-ADMA1725>3.0.CO;2-Q

(In_1-xMn_x)As diluted magnetic semiconductor quantum dots with above room temperature ferromagnetic transition

Hee Chang Jeon
, Youn Seok Jeong
, Tae Won Kang
, Tae Whan Kim
, Kwang Jae Chung
, Kwang Jo Chung
, Wonhc Jhe
, Se Ahn Song

Quantum-Functional Semiconductor Research Center

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

The synthesis of a new type of (In_1-xMn_x)As diluted magnetic semiconductor (DMS) quantum dots (QDs) with a T_c above room temperature using MBE, which is a simple and reproducible method is reported. The measurements showed that the highest Mn content in the (In_1-xMn_x)As crystalline QDs is 0.16%. The magnetic force microscopy (MFM) at 300 K, and the magnetization curve as a function of the magnetic field at 5 K, indicate that the (In_0.84Mn_0.16)As QDs are ferromagnetic.

Original language	English
Pages (from-to)	1725-1728
Number of pages	4
Journal	Advanced Materials
Volume	14
Issue number	23
DOIs	https://doi.org/10.1002/1521-4095(20021203)14:23<1725::AID-ADMA1725>3.0.CO;2-Q
State	Published - 3 Dec 2002

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10.1002/1521-4095(20021203)14:23<1725::AID-ADMA1725>3.0.CO;2-Q

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title = "(In1-xMnx)As diluted magnetic semiconductor quantum dots with above room temperature ferromagnetic transition",

abstract = "The synthesis of a new type of (In1-xMnx)As diluted magnetic semiconductor (DMS) quantum dots (QDs) with a Tc above room temperature using MBE, which is a simple and reproducible method is reported. The measurements showed that the highest Mn content in the (In1-xMnx)As crystalline QDs is 0.16\%. The magnetic force microscopy (MFM) at 300 K, and the magnetization curve as a function of the magnetic field at 5 K, indicate that the (In0.84Mn0.16)As QDs are ferromagnetic.",

author = "Jeon, \{Hee Chang\} and Jeong, \{Youn Seok\} and Kang, \{Tae Won\} and Kim, \{Tae Whan\} and Chung, \{Kwang Jae\} and Chung, \{Kwang Jo\} and Wonhc Jhe and Song, \{Se Ahn\}",

year = "2002",

month = dec,

day = "3",

doi = "10.1002/1521-4095(20021203)14:23<1725::AID-ADMA1725>3.0.CO;2-Q",

language = "English",

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TY - JOUR

T1 - (In1-xMnx)As diluted magnetic semiconductor quantum dots with above room temperature ferromagnetic transition

AU - Jeon, Hee Chang

AU - Jeong, Youn Seok

AU - Kang, Tae Won

AU - Kim, Tae Whan

AU - Chung, Kwang Jae

AU - Chung, Kwang Jo

AU - Jhe, Wonhc

AU - Song, Se Ahn

PY - 2002/12/3

Y1 - 2002/12/3

N2 - The synthesis of a new type of (In1-xMnx)As diluted magnetic semiconductor (DMS) quantum dots (QDs) with a Tc above room temperature using MBE, which is a simple and reproducible method is reported. The measurements showed that the highest Mn content in the (In1-xMnx)As crystalline QDs is 0.16%. The magnetic force microscopy (MFM) at 300 K, and the magnetization curve as a function of the magnetic field at 5 K, indicate that the (In0.84Mn0.16)As QDs are ferromagnetic.

AB - The synthesis of a new type of (In1-xMnx)As diluted magnetic semiconductor (DMS) quantum dots (QDs) with a Tc above room temperature using MBE, which is a simple and reproducible method is reported. The measurements showed that the highest Mn content in the (In1-xMnx)As crystalline QDs is 0.16%. The magnetic force microscopy (MFM) at 300 K, and the magnetization curve as a function of the magnetic field at 5 K, indicate that the (In0.84Mn0.16)As QDs are ferromagnetic.

UR - https://www.scopus.com/pages/publications/0037016206

U2 - 10.1002/1521-4095(20021203)14:23<1725::AID-ADMA1725>3.0.CO;2-Q

DO - 10.1002/1521-4095(20021203)14:23<1725::AID-ADMA1725>3.0.CO;2-Q

M3 - Article

AN - SCOPUS:0037016206

SN - 0935-9648

VL - 14

SP - 1725

EP - 1728

JO - Advanced Materials

JF - Advanced Materials

IS - 23

ER -

(In_1-xMn_x)As diluted magnetic semiconductor quantum dots with above room temperature ferromagnetic transition

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