Integration of coplanar (Ba,Sr)TiO3 microwave phase shifters onto Si wafers using TiO3 buffer layers

Ki Byoung Kim, The Soon Yun, Jong Chul Lee, Hyun Suk Kim, Ho Gi Kim, Il Doo Kim

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

In this paper, a Ba0.6Sr0.4TiO3 (BST) tunable phase shifter with TiO2 films as microwave buffer layer between BST and silicon (Si) substrates is presented. The TiO2, buffer layer is grown by atomic layer deposition (ALD) onto Si substrate followed by pulsed laser deposition (PLD) of BST thin films onto the TiO 2 buffer layer. The phase shifter fabricated on BST films grown on TiO2/Si substrate shows a good figure of merit (FOM) of 75.4°/dB by exhibiting improved tunablity while retaining an appropriate dielectric Q as compared to 55.1°/dB of BST/MgO structure. The TiO2 buffer layer grown by ALD enables successful integration of BST-based microwave tunable devices with high resistive Si wafer.

Original languageEnglish
Pages (from-to)518-523
Number of pages6
JournalIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Volume53
Issue number3
DOIs
StatePublished - Mar 2006

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