Integration of transition metal dichalcogenides with perovskite oxide for electronic applications

The heterointegration of two-dimensional transition metal dichalcogenides (TMDs) with perovskite oxides has emerged as a promising strategy for realizing multifunctional electronic devices. TMDs provide atomically thin channels with high carrier mobility and van der Waals interfaces, while perovskite oxides offer diverse functionalities such as high dielectric permittivity and ferroelectricity. When combined, these materials form mixed-dimensional heterostructures in which interfacial coupling gives rise to fascinating physical properties beyond those of the individual constituents. In this review, we summarize recent progress in TMD/perovskite oxide heterostructures with a focus on interface-driven phenomena. We discuss how atomic-scale interface structures govern interfacial charge redistribution, ferroelectric polarization, and magnetic order. Emergent phenomena such as polaronic trions, valley polarization induced by magnetic proximity effects, and interface-enhanced superconductivity are introduced. In addition, we compare transfer-based and deposition-based fabrication strategies and discuss representative device applications, including high-k oxide transistors, strain-effect devices, and optoelectronic and tunneling memories.