Interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd0.96Zn0.04Te (211)B substrates by molecular beam epitaxy

M. S. Han, S. R. Hahn, H. C. Kwon, Y. Bin, T. W. Kang, J. H. Leem, Y. B. Hou, H. C. Jeon, J. K. Hyun, Y. T. Jeoung, H. K. Kim, J. M. Kim, T. W. Kim

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Abstract

Double-crystal x-ray rocking curve (DCRC) and secondary-ion mass-spectroscopy (SIMS) measurements have been performed to investigate the effect of rapid thermal annealing on the interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd0.96Zn0.04Te (211)B substrates by molecular beam epitaxy. The sharp satellite peaks of the DCRC measurements on a 100-period HgTe/CdTe (100Å/ 100Å) superlattice show a periodic arrangement of the superlattice with high- quality interfaces. The negative direction of the entropy change obtained from the diffusion coefficients as a function of the reciprocal of the temperature after RTA indicates that the Hg diffusion for the annealed HgTe/CdTe superlattice is caused by an interstitial mechanism. The Cd and the Hg concentration profiles near the annealed HgTe/CdTe superlattice interfaces, as measured by SIMS, show a nonlinear behavior for Hg, originating from the interstitial diffusion mechanism of the Hg composition. These results indicate that a nonlinear interdiffusion behavior is dominant for HgTe/CdTe superlattices annealed at 190°C and that the rectangular shape of HgTe/CdTe superlattices may change to a parabolic shape because of the intermixing of Hg and Cd due to the thermal treatment.

Original languageEnglish
Pages (from-to)680-683
Number of pages4
JournalJournal of Electronic Materials
Volume27
Issue number6
DOIs
StatePublished - Jun 1998

Keywords

  • HgTe/CdTe superlattices
  • Interdiffusion
  • Molecular beam epitaxy

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