@inproceedings{583885099c4647df84762d6229faba5a,
title = "Interface defect centers in oxides on Si1-xGex for ULSI applications",
abstract = "Rapid thermal oxidation (RTO) of heteroepitaxial thin Si1- xGex layers (x=0.85) at 815° C in dry O2 has been studied. We have investigated the origin of interface defects in Si 0.15Ge0.85/SiGeO2 RTO oxides by electron paramagnetic resonance (EPR) through internal photoemission (IPE) technique. Spin concentration of the paramagnetic defect centers have been determined from EPR results. After IPE capacitance-voltage (C-V) and current-voltage (I-V) characteristics were measured at different bias conditions to observe the charge build up due to trapping at pre-existing defects or defect precursors. Calculated flat band voltage from high frequency C-V characteristics has been modeled and number of traps per unit area (Ntrap) and capture cross-section (σ) of the traps have also been determined.",
keywords = "Charge trapping, Internal photoemission, Magnetic resonance, SiGe",
author = "S. Mallik and C. Mahata and Hota, {M. K.} and Sarkar, {C. K.} and Maiti, {C. K.}",
year = "2009",
language = "English",
isbn = "9788184651522",
series = "Codec - 2009 - 4th International Conference on Computers and Devices for Communication",
booktitle = "Codec - 2009 - 4th International Conference on Computers and Devices for Communication",
note = "4th International Conference on Computers and Devices for Communication, Codec 2009 ; Conference date: 14-12-2009 Through 16-12-2009",
}