Interface defect centers in oxides on Si1-xGex for ULSI applications

S. Mallik, C. Mahata, M. K. Hota, C. K. Sarkar, C. K. Maiti

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Rapid thermal oxidation (RTO) of heteroepitaxial thin Si1- xGex layers (x=0.85) at 815° C in dry O2 has been studied. We have investigated the origin of interface defects in Si 0.15Ge0.85/SiGeO2 RTO oxides by electron paramagnetic resonance (EPR) through internal photoemission (IPE) technique. Spin concentration of the paramagnetic defect centers have been determined from EPR results. After IPE capacitance-voltage (C-V) and current-voltage (I-V) characteristics were measured at different bias conditions to observe the charge build up due to trapping at pre-existing defects or defect precursors. Calculated flat band voltage from high frequency C-V characteristics has been modeled and number of traps per unit area (Ntrap) and capture cross-section (σ) of the traps have also been determined.

Original languageEnglish
Title of host publicationCodec - 2009 - 4th International Conference on Computers and Devices for Communication
StatePublished - 2009
Event4th International Conference on Computers and Devices for Communication, Codec 2009 - Kolkata, India
Duration: 14 Dec 200916 Dec 2009

Publication series

NameCodec - 2009 - 4th International Conference on Computers and Devices for Communication

Conference

Conference4th International Conference on Computers and Devices for Communication, Codec 2009
Country/TerritoryIndia
CityKolkata
Period14/12/0916/12/09

Keywords

  • Charge trapping
  • Internal photoemission
  • Magnetic resonance
  • SiGe

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