Interface properties of atomic layer deposited TiO2/Al 2O3 films on In0.53Ga0.47As/InP substrates
- C. Mukherjee
- , T. Das
- , C. Mahata
- , C. K. Maiti
- , C. K. Chia
- , S. Y. Chiam
- , D. Z. Chi
- , G. K. Dalapati
- Indian Institute of Technology Kharagpur
- Agency for Science, Technology and Research, Singapore
Research output: Contribution to journal › Article › peer-review
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Scopus
citations