@inproceedings{f54f8d80f3d04b239e5bed3ffa83dd0d,
title = "Interfacial and electrical properties of GaAs metal-oxide-semiconductor device with TiOxNy high-k gate dielectrics",
abstract = "Fermi level pinning attributed to oxides at the GaAs/high-k interface is a major obstacle to develop GaAs-based metal-oxide-semiconductor devices. In this paper, plasma nitridation of GaAs surface prior to the high-k deposition is shown to solve the issue of interface pinning. X-ray photoelectron spectroscopy (XPS) study confirms that nitridation passivation effectively suppresses the oxides formation and minimizes the Fermi level pinning at the interface between the GaAs and TiO2. Plasma-nitrided TiO2 (TiO xNy) films on n-GaAs show better metal-oxide-semiconductor (MOS) capacitor characteristics, such as interface state density, accumulation capacitance, hysteresis, and leakage current.",
author = "T. Dasa and C. Mahata and G. Sutradhar and Bose, {P. K.} and Maiti, {C. K.}",
year = "2011",
doi = "10.1149/1.3569925",
language = "English",
isbn = "9781566778640",
series = "ECS Transactions",
number = "3",
pages = "325--332",
booktitle = "Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3",
edition = "3",
note = "Graphene Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications - 3 - 219th ECS Meeting ; Conference date: 02-05-2011 Through 04-05-2011",
}