Interfacial and electrical properties of GaAs metal-oxide-semiconductor device with TiOxNy high-k gate dielectrics

T. Dasa, C. Mahata, G. Sutradhar, P. K. Bose, C. K. Maiti

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

Fermi level pinning attributed to oxides at the GaAs/high-k interface is a major obstacle to develop GaAs-based metal-oxide-semiconductor devices. In this paper, plasma nitridation of GaAs surface prior to the high-k deposition is shown to solve the issue of interface pinning. X-ray photoelectron spectroscopy (XPS) study confirms that nitridation passivation effectively suppresses the oxides formation and minimizes the Fermi level pinning at the interface between the GaAs and TiO2. Plasma-nitrided TiO2 (TiO xNy) films on n-GaAs show better metal-oxide-semiconductor (MOS) capacitor characteristics, such as interface state density, accumulation capacitance, hysteresis, and leakage current.

Original languageEnglish
Title of host publicationDielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3
Pages325-332
Number of pages8
Edition3
DOIs
StatePublished - 2011
EventGraphene Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications - 3 - 219th ECS Meeting - Montreal, QC, Canada
Duration: 2 May 20114 May 2011

Publication series

NameECS Transactions
Number3
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceGraphene Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications - 3 - 219th ECS Meeting
Country/TerritoryCanada
CityMontreal, QC
Period2/05/114/05/11

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