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Interfacial and electrical properties of GaAs metal-oxide-semiconductor device with TiOxNy high-k gate dielectrics

  • T. Dasa
  • , C. Mahata
  • , G. Sutradhar
  • , P. K. Bose
  • , C. K. Maiti

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

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