TY - JOUR
T1 - Interfacial and electrical properties of HfO 2 gate dielectrics grown on GaAs by atomic layer deposition using different oxidants
AU - Byun, Young Chul
AU - Mahata, Chandreswar
AU - An, Chee Hong
AU - Oh, Jungwoo
AU - Choi, Rino
AU - Kim, Hyoungsub
PY - 2012/10/31
Y1 - 2012/10/31
N2 - In this paper, we examined the effects of two different oxidants (H 2O and O 3) used during the atomic layer deposition (ALD) of HfO 2 films on GaAs, particularly focusing on its interfacial and electrical properties. In comparison with the H 2O-based ALD process, the O 3-based process produced a large amount of elemental As and Ga-O related bonds near the HfO 2/GaAs interface due to its stronger oxidizing power. High interface state and border trap densities of the O 3-based sample degraded the low-field electrical stability, which was confirmed by the capacitance and leakage current measurements under various voltage-stressing conditions. However, in terms of high-field stability, the O 3-based sample showed a much stronger resistance to stress-induced trap generation than the H 2O-based sample.
AB - In this paper, we examined the effects of two different oxidants (H 2O and O 3) used during the atomic layer deposition (ALD) of HfO 2 films on GaAs, particularly focusing on its interfacial and electrical properties. In comparison with the H 2O-based ALD process, the O 3-based process produced a large amount of elemental As and Ga-O related bonds near the HfO 2/GaAs interface due to its stronger oxidizing power. High interface state and border trap densities of the O 3-based sample degraded the low-field electrical stability, which was confirmed by the capacitance and leakage current measurements under various voltage-stressing conditions. However, in terms of high-field stability, the O 3-based sample showed a much stronger resistance to stress-induced trap generation than the H 2O-based sample.
UR - http://www.scopus.com/inward/record.url?scp=84867389256&partnerID=8YFLogxK
U2 - 10.1088/0022-3727/45/43/435305
DO - 10.1088/0022-3727/45/43/435305
M3 - Article
AN - SCOPUS:84867389256
SN - 0022-3727
VL - 45
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
IS - 43
M1 - 435305
ER -