Interfacial energy level alignments between low-band-gap polymer PTB7 and indium zinc oxide anode

Dongguen Shin; Jeihyun Lee; Soohyung Park; Junkyeong Jeong; Ki Won Seo; Hyo Joong Kim; Han Ki Kim; Min Jun Choi; Kwun Bum Chung; Yeonjin Yi

doi:10.7567/APEX.8.095701

Interfacial energy level alignments between low-band-gap polymer PTB7 and indium zinc oxide anode

Dongguen Shin, Jeihyun Lee, Soohyung Park, Junkyeong Jeong, Ki Won Seo, Hyo Joong Kim, Han Ki Kim, Min Jun Choi, Kwun Bum Chung, Yeonjin Yi

Department of Physics

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The interfacial energy level alignments between poly(thieno[3,4-b]-thiophene)-co-benzodithiophene (PTB7) and indium zinc oxide (IZO) were investigated. In situ ultraviolet photoemission spectroscopy measurements were conducted with the step-by-step deposition of PTB7 on IZO substrate. All spectral changes were analyzed between each deposition step, and interfacial energy level alignments were estimated. The hole barrier of standard ultraviolet-ozone treated IZO is 0.58 eV, which is lower than the value of 1.09 eV obtained for bare IZO. The effect of barrier reduction on the hole transport was also confirmed with electrical measurements of hole-dominated devices.

Original language	English
Article number	095701
Journal	Applied Physics Express
Volume	8
Issue number	9
DOIs	https://doi.org/10.7567/APEX.8.095701
State	Published - 1 Sep 2015

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title = "Interfacial energy level alignments between low-band-gap polymer PTB7 and indium zinc oxide anode",

abstract = "The interfacial energy level alignments between poly(thieno[3,4-b]-thiophene)-co-benzodithiophene (PTB7) and indium zinc oxide (IZO) were investigated. In situ ultraviolet photoemission spectroscopy measurements were conducted with the step-by-step deposition of PTB7 on IZO substrate. All spectral changes were analyzed between each deposition step, and interfacial energy level alignments were estimated. The hole barrier of standard ultraviolet-ozone treated IZO is 0.58 eV, which is lower than the value of 1.09 eV obtained for bare IZO. The effect of barrier reduction on the hole transport was also confirmed with electrical measurements of hole-dominated devices.",

author = "Dongguen Shin and Jeihyun Lee and Soohyung Park and Junkyeong Jeong and Seo, {Ki Won} and Kim, {Hyo Joong} and Kim, {Han Ki} and Choi, {Min Jun} and Chung, {Kwun Bum} and Yeonjin Yi",

note = "Publisher Copyright: {\textcopyright} 2015 The Japan Society of Applied Physics.",

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doi = "10.7567/APEX.8.095701",

language = "English",

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T1 - Interfacial energy level alignments between low-band-gap polymer PTB7 and indium zinc oxide anode

AU - Shin, Dongguen

AU - Lee, Jeihyun

AU - Park, Soohyung

AU - Jeong, Junkyeong

AU - Seo, Ki Won

AU - Kim, Hyo Joong

AU - Kim, Han Ki

AU - Choi, Min Jun

AU - Chung, Kwun Bum

AU - Yi, Yeonjin

PY - 2015/9/1

Y1 - 2015/9/1

N2 - The interfacial energy level alignments between poly(thieno[3,4-b]-thiophene)-co-benzodithiophene (PTB7) and indium zinc oxide (IZO) were investigated. In situ ultraviolet photoemission spectroscopy measurements were conducted with the step-by-step deposition of PTB7 on IZO substrate. All spectral changes were analyzed between each deposition step, and interfacial energy level alignments were estimated. The hole barrier of standard ultraviolet-ozone treated IZO is 0.58 eV, which is lower than the value of 1.09 eV obtained for bare IZO. The effect of barrier reduction on the hole transport was also confirmed with electrical measurements of hole-dominated devices.

AB - The interfacial energy level alignments between poly(thieno[3,4-b]-thiophene)-co-benzodithiophene (PTB7) and indium zinc oxide (IZO) were investigated. In situ ultraviolet photoemission spectroscopy measurements were conducted with the step-by-step deposition of PTB7 on IZO substrate. All spectral changes were analyzed between each deposition step, and interfacial energy level alignments were estimated. The hole barrier of standard ultraviolet-ozone treated IZO is 0.58 eV, which is lower than the value of 1.09 eV obtained for bare IZO. The effect of barrier reduction on the hole transport was also confirmed with electrical measurements of hole-dominated devices.

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DO - 10.7567/APEX.8.095701

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VL - 8

JO - Applied Physics Express

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Interfacial energy level alignments between low-band-gap polymer PTB7 and indium zinc oxide anode

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