Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate
- C. Y. Kim
- , S. W. Cho
- , M. H. Cho
- , K. B. Chung
- , C. H. An
- , H. Kim
- , H. J. Lee
- , D. H. Ko
Research output: Contribution to journal › Article › peer-review
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Scopus
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