Internal electric fields due to piezoelectric and spontaneous polarizations in CdZnO/MgZnO quantum well

H. C. Jeon, S. J. Lee, T. W. Kang, S. H. Park, Yung Kee Yeo, T. F. George

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have investigated optical properties as a function of internal and external fields in the quantum well (QW). Optical properties of CdZnO/MgZnO QW structures are investigated by using many-body effects. The CdZnO/MgZnO QW structure with high Cd composition is found to have smaller optical gain because the strain-induced piezoelectric polarization and the spontaneous polarization in the well increase with the inclusion of Cd. These results demonstrate that high performance laser diode operation can be realized in CdZnO/MgZnO QW structures by reducing those polarizations adopting dipole reverse method.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages581-582
Number of pages2
DOIs
StatePublished - 2011
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: 25 Jul 201030 Jul 2010

Publication series

NameAIP Conference Proceedings
Volume1399
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference30th International Conference on the Physics of Semiconductors, ICPS-30
Country/TerritoryKorea, Republic of
CitySeoul
Period25/07/1030/07/10

Keywords

  • optical gain
  • piezoelectric polarization
  • quantum well
  • spontaneous polarization

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