Internal electric fields due to piezoelectric and spontaneous polarizations in CdZnO/MgZnO quantum well with various applied electric field effects

H. C. Jeon; S. J. Lee; T. W. Kang; S. H. Park

doi:10.1016/j.physb.2011.09.083

Internal electric fields due to piezoelectric and spontaneous polarizations in CdZnO/MgZnO quantum well with various applied electric field effects

H. C. Jeon, S. J. Lee, T. W. Kang, S. H. Park

Quantum-Functional Semiconductor Research Center

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The strain-induced piezoelectric polarization and the spontaneous polarization can be reduced effectively using the applied electric field in the CdZnO/ZnMgO quantum well (QW) structure with high Cd composition. That is, optical properties as a function of internal and external fields in the CdZnO/ZnMgO QW with various applied electric field result in the increased optical gain due to the fact that the QW potential profile is flattened as a result of the compensation of the internal field by the reverse field as confirmed. These results demonstrate that a high-performance optical device operation can be realized in CdZnO/MgZnO QW structures by reducing the droop phenomenon.

Original language	English
Pages (from-to)	1550-1552
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	407
Issue number	10
DOIs	https://doi.org/10.1016/j.physb.2011.09.083
State	Published - 15 May 2012

Keywords

Applied electric field
Internal field
Optical gain
Quantum well

Access to Document

10.1016/j.physb.2011.09.083

Cite this

@article{432a32a467f14205937b1f8e245a76e7,

title = "Internal electric fields due to piezoelectric and spontaneous polarizations in CdZnO/MgZnO quantum well with various applied electric field effects",

abstract = "The strain-induced piezoelectric polarization and the spontaneous polarization can be reduced effectively using the applied electric field in the CdZnO/ZnMgO quantum well (QW) structure with high Cd composition. That is, optical properties as a function of internal and external fields in the CdZnO/ZnMgO QW with various applied electric field result in the increased optical gain due to the fact that the QW potential profile is flattened as a result of the compensation of the internal field by the reverse field as confirmed. These results demonstrate that a high-performance optical device operation can be realized in CdZnO/MgZnO QW structures by reducing the droop phenomenon.",

keywords = "Applied electric field, Internal field, Optical gain, Quantum well",

author = "Jeon, {H. C.} and Lee, {S. J.} and Kang, {T. W.} and Park, {S. H.}",

year = "2012",

month = may,

day = "15",

doi = "10.1016/j.physb.2011.09.083",

language = "English",

volume = "407",

pages = "1550--1552",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

number = "10",

}

TY - JOUR

T1 - Internal electric fields due to piezoelectric and spontaneous polarizations in CdZnO/MgZnO quantum well with various applied electric field effects

AU - Jeon, H. C.

AU - Lee, S. J.

AU - Kang, T. W.

AU - Park, S. H.

PY - 2012/5/15

Y1 - 2012/5/15

N2 - The strain-induced piezoelectric polarization and the spontaneous polarization can be reduced effectively using the applied electric field in the CdZnO/ZnMgO quantum well (QW) structure with high Cd composition. That is, optical properties as a function of internal and external fields in the CdZnO/ZnMgO QW with various applied electric field result in the increased optical gain due to the fact that the QW potential profile is flattened as a result of the compensation of the internal field by the reverse field as confirmed. These results demonstrate that a high-performance optical device operation can be realized in CdZnO/MgZnO QW structures by reducing the droop phenomenon.

AB - The strain-induced piezoelectric polarization and the spontaneous polarization can be reduced effectively using the applied electric field in the CdZnO/ZnMgO quantum well (QW) structure with high Cd composition. That is, optical properties as a function of internal and external fields in the CdZnO/ZnMgO QW with various applied electric field result in the increased optical gain due to the fact that the QW potential profile is flattened as a result of the compensation of the internal field by the reverse field as confirmed. These results demonstrate that a high-performance optical device operation can be realized in CdZnO/MgZnO QW structures by reducing the droop phenomenon.

KW - Applied electric field

KW - Internal field

KW - Optical gain

KW - Quantum well

UR - http://www.scopus.com/inward/record.url?scp=84859159445&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2011.09.083

DO - 10.1016/j.physb.2011.09.083

M3 - Article

AN - SCOPUS:84859159445

SN - 0921-4526

VL - 407

SP - 1550

EP - 1552

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 10

ER -

Internal electric fields due to piezoelectric and spontaneous polarizations in CdZnO/MgZnO quantum well with various applied electric field effects

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this