Abstract
Sneak path current is a severe hindrance for the application of high-density resistive random-access memory (RRAM) array designs. In this work, we demonstrate nonlinear (NL) resistive switching characteristics of a HfOx/SiOx-based stacking structure as a realization for selector-less RRAM devices. The NL characteristic was obtained and designed by optimizing the internal filament location with a low effective dielectric constant in the HfOx/SiOx structure. The stacking HfOx/SiOx-based RRAM device as the one-resistor-only memory cell is applicable without needing an additional selector device to solve the sneak path issue with a switching voltage of ∼1 V, which is desirable for low-power operating in built-in nonlinearity crossbar array configurations.
Original language | English |
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Article number | 055108 |
Journal | Journal Physics D: Applied Physics |
Volume | 51 |
Issue number | 5 |
DOIs | |
State | Published - 16 Jan 2018 |
Keywords
- nonlinear
- resistive switching
- selector-less
- silicon dioxide