Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application

Ying Chen Chen; Chih Yang Lin; Hui Chun Huang; Sungjun Kim; Burt Fowler; Yao Feng Chang; Xiaohan Wu; Gaobo Xu; Ting Chang Chang; Jack C. Lee

doi:10.1088/1361-6463/aaa1b9

Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application

Ying Chen Chen
, Chih Yang Lin
, Hui Chun Huang
, Sungjun Kim
, Burt Fowler
, Yao Feng Chang
, Xiaohan Wu
, Gaobo Xu
, Ting Chang Chang
, Jack C. Lee

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Sneak path current is a severe hindrance for the application of high-density resistive random-access memory (RRAM) array designs. In this work, we demonstrate nonlinear (NL) resistive switching characteristics of a HfO_x/SiO_x-based stacking structure as a realization for selector-less RRAM devices. The NL characteristic was obtained and designed by optimizing the internal filament location with a low effective dielectric constant in the HfO_x/SiO_x structure. The stacking HfO_x/SiO_x-based RRAM device as the one-resistor-only memory cell is applicable without needing an additional selector device to solve the sneak path issue with a switching voltage of ∼1 V, which is desirable for low-power operating in built-in nonlinearity crossbar array configurations.

Original language	English
Article number	055108
Journal	Journal Physics D: Applied Physics
Volume	51
Issue number	5
DOIs	https://doi.org/10.1088/1361-6463/aaa1b9
State	Published - 16 Jan 2018

Keywords

nonlinear
resistive switching
selector-less
silicon dioxide

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10.1088/1361-6463/aaa1b9

Cite this

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title = "Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application",

abstract = "Sneak path current is a severe hindrance for the application of high-density resistive random-access memory (RRAM) array designs. In this work, we demonstrate nonlinear (NL) resistive switching characteristics of a HfOx/SiOx-based stacking structure as a realization for selector-less RRAM devices. The NL characteristic was obtained and designed by optimizing the internal filament location with a low effective dielectric constant in the HfOx/SiOx structure. The stacking HfOx/SiOx-based RRAM device as the one-resistor-only memory cell is applicable without needing an additional selector device to solve the sneak path issue with a switching voltage of ∼1 V, which is desirable for low-power operating in built-in nonlinearity crossbar array configurations.",

keywords = "nonlinear, resistive switching, selector-less, silicon dioxide",

author = "Chen, \{Ying Chen\} and Lin, \{Chih Yang\} and Huang, \{Hui Chun\} and Sungjun Kim and Burt Fowler and Chang, \{Yao Feng\} and Xiaohan Wu and Gaobo Xu and Chang, \{Ting Chang\} and Lee, \{Jack C.\}",

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doi = "10.1088/1361-6463/aaa1b9",

language = "English",

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T1 - Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application

AU - Chen, Ying Chen

AU - Lin, Chih Yang

AU - Huang, Hui Chun

AU - Kim, Sungjun

AU - Fowler, Burt

AU - Chang, Yao Feng

AU - Wu, Xiaohan

AU - Xu, Gaobo

AU - Chang, Ting Chang

AU - Lee, Jack C.

PY - 2018/1/16

Y1 - 2018/1/16

N2 - Sneak path current is a severe hindrance for the application of high-density resistive random-access memory (RRAM) array designs. In this work, we demonstrate nonlinear (NL) resistive switching characteristics of a HfOx/SiOx-based stacking structure as a realization for selector-less RRAM devices. The NL characteristic was obtained and designed by optimizing the internal filament location with a low effective dielectric constant in the HfOx/SiOx structure. The stacking HfOx/SiOx-based RRAM device as the one-resistor-only memory cell is applicable without needing an additional selector device to solve the sneak path issue with a switching voltage of ∼1 V, which is desirable for low-power operating in built-in nonlinearity crossbar array configurations.

AB - Sneak path current is a severe hindrance for the application of high-density resistive random-access memory (RRAM) array designs. In this work, we demonstrate nonlinear (NL) resistive switching characteristics of a HfOx/SiOx-based stacking structure as a realization for selector-less RRAM devices. The NL characteristic was obtained and designed by optimizing the internal filament location with a low effective dielectric constant in the HfOx/SiOx structure. The stacking HfOx/SiOx-based RRAM device as the one-resistor-only memory cell is applicable without needing an additional selector device to solve the sneak path issue with a switching voltage of ∼1 V, which is desirable for low-power operating in built-in nonlinearity crossbar array configurations.

KW - nonlinear

KW - resistive switching

KW - selector-less

KW - silicon dioxide

UR - https://www.scopus.com/pages/publications/85040769557

U2 - 10.1088/1361-6463/aaa1b9

DO - 10.1088/1361-6463/aaa1b9

M3 - Article

AN - SCOPUS:85040769557

SN - 0022-3727

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JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

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ER -

Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application

Abstract

Keywords

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