Abstract
Nanosheet gate-all-around field-effect transistors (NS GAAFETs) suffer from self-heating effects (SHEs), degrading their performance. This work demonstrates that using a Schottky barrier drain contact facilitates simultaneous optimization of the thermal resistance (Rth) and ON-current, leading to both ameliorated device performance and thermal reliability. Synopsis Sentaurus TCAD results delineate that thermoelectric cooling at the Schottky drain alleviates the SHEs reducing the maximum lattice temperature (TLmax) of up to 20.12 K compared to that at an ohmic drain contact.
Original language | English |
---|---|
Article number | 9462907 |
Pages (from-to) | 4156-4160 |
Number of pages | 5 |
Journal | IEEE Transactions on Electron Devices |
Volume | 68 |
Issue number | 8 |
DOIs | |
State | Published - Aug 2021 |
Keywords
- Bias temperature instability (BTI)
- hot carrier injection (HCI)
- Schottky drain contact
- self-heating effect (SHE)
- thermal reliability
- thermal resistance