Internal Thermoelectric Cooling in Nanosheet Gate-All-Around FETs Using Schottky Drain Contacts

Min Jae Kang, Min Sung Kim, Sung Hoon Jang, Kristel Fobelets

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Nanosheet gate-all-around field-effect transistors (NS GAAFETs) suffer from self-heating effects (SHEs), degrading their performance. This work demonstrates that using a Schottky barrier drain contact facilitates simultaneous optimization of the thermal resistance (Rth) and ON-current, leading to both ameliorated device performance and thermal reliability. Synopsis Sentaurus TCAD results delineate that thermoelectric cooling at the Schottky drain alleviates the SHEs reducing the maximum lattice temperature (TLmax) of up to 20.12 K compared to that at an ohmic drain contact.

Original languageEnglish
Article number9462907
Pages (from-to)4156-4160
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume68
Issue number8
DOIs
StatePublished - Aug 2021

Keywords

  • Bias temperature instability (BTI)
  • hot carrier injection (HCI)
  • Schottky drain contact
  • self-heating effect (SHE)
  • thermal reliability
  • thermal resistance

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