Investigation of analog resistive switching dynamics in microwave-assisted Fe3O4 based memristor for neuromorphic application

Vivek Pratap Singh; Chandra Prakash Singh; Harsh Ranjan; Saurabh Kumar Pandey

doi:10.1016/j.matlet.2023.134431

Investigation of analog resistive switching dynamics in microwave-assisted Fe₃O₄ based memristor for neuromorphic application

Vivek Pratap Singh, Chandra Prakash Singh, Harsh Ranjan, Saurabh Kumar Pandey

Department of Advanced Battery Convergence Engineering

Indian Institute of Technology Patna

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

In this report, we have studied resistive switching (RS) dynamics in the microwave-assisted magnetite (Fe₃O₄) based memristive device by having Platinum (Pt) and Fluorine-doped-Tin-Oxide (FTO) as metal electrodes. Fe₃O₄ insulating layer film has been examined by using X-ray diffraction (XRD), energy dispersive X-ray (EDX), and field emission scanning electron microscopy (FESEM), respectively, for crystal structure, elemental composition, and surface microstructure. The electrical response of the fabricated memristive device has been observed by using Keithley-4200 parameter analyzer with −0.4 V/+0.4 V and −0.8 V/+0.8 V DC sweeping voltage at room temperature. The fabricated device has shown analog resistive switching (ARS); therefore potentiation/depression behavior of the device has been observed by applying multiple positive and negative pulses for evaluation of its synaptic performance.

Original language	English
Article number	134431
Journal	Materials Letters
Volume	344
DOIs	https://doi.org/10.1016/j.matlet.2023.134431
State	Published - 1 Aug 2023

Keywords

Deposition
Interface
Nanocrystalline materials
Thin films

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10.1016/j.matlet.2023.134431

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title = "Investigation of analog resistive switching dynamics in microwave-assisted Fe3O4 based memristor for neuromorphic application",

abstract = "In this report, we have studied resistive switching (RS) dynamics in the microwave-assisted magnetite (Fe3O4) based memristive device by having Platinum (Pt) and Fluorine-doped-Tin-Oxide (FTO) as metal electrodes. Fe3O4 insulating layer film has been examined by using X-ray diffraction (XRD), energy dispersive X-ray (EDX), and field emission scanning electron microscopy (FESEM), respectively, for crystal structure, elemental composition, and surface microstructure. The electrical response of the fabricated memristive device has been observed by using Keithley-4200 parameter analyzer with −0.4 V/+0.4 V and −0.8 V/+0.8 V DC sweeping voltage at room temperature. The fabricated device has shown analog resistive switching (ARS); therefore potentiation/depression behavior of the device has been observed by applying multiple positive and negative pulses for evaluation of its synaptic performance.",

keywords = "Deposition, Interface, Nanocrystalline materials, Thin films",

author = "{Pratap Singh}, Vivek and {Prakash Singh}, Chandra and Harsh Ranjan and {Kumar Pandey}, Saurabh",

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year = "2023",

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doi = "10.1016/j.matlet.2023.134431",

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T1 - Investigation of analog resistive switching dynamics in microwave-assisted Fe3O4 based memristor for neuromorphic application

AU - Pratap Singh, Vivek

AU - Prakash Singh, Chandra

AU - Ranjan, Harsh

AU - Kumar Pandey, Saurabh

PY - 2023/8/1

Y1 - 2023/8/1

N2 - In this report, we have studied resistive switching (RS) dynamics in the microwave-assisted magnetite (Fe3O4) based memristive device by having Platinum (Pt) and Fluorine-doped-Tin-Oxide (FTO) as metal electrodes. Fe3O4 insulating layer film has been examined by using X-ray diffraction (XRD), energy dispersive X-ray (EDX), and field emission scanning electron microscopy (FESEM), respectively, for crystal structure, elemental composition, and surface microstructure. The electrical response of the fabricated memristive device has been observed by using Keithley-4200 parameter analyzer with −0.4 V/+0.4 V and −0.8 V/+0.8 V DC sweeping voltage at room temperature. The fabricated device has shown analog resistive switching (ARS); therefore potentiation/depression behavior of the device has been observed by applying multiple positive and negative pulses for evaluation of its synaptic performance.

AB - In this report, we have studied resistive switching (RS) dynamics in the microwave-assisted magnetite (Fe3O4) based memristive device by having Platinum (Pt) and Fluorine-doped-Tin-Oxide (FTO) as metal electrodes. Fe3O4 insulating layer film has been examined by using X-ray diffraction (XRD), energy dispersive X-ray (EDX), and field emission scanning electron microscopy (FESEM), respectively, for crystal structure, elemental composition, and surface microstructure. The electrical response of the fabricated memristive device has been observed by using Keithley-4200 parameter analyzer with −0.4 V/+0.4 V and −0.8 V/+0.8 V DC sweeping voltage at room temperature. The fabricated device has shown analog resistive switching (ARS); therefore potentiation/depression behavior of the device has been observed by applying multiple positive and negative pulses for evaluation of its synaptic performance.

KW - Deposition

KW - Interface

KW - Nanocrystalline materials

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=85159855744&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2023.134431

DO - 10.1016/j.matlet.2023.134431

M3 - Article

AN - SCOPUS:85159855744

SN - 0167-577X

VL - 344

JO - Materials Letters

JF - Materials Letters

M1 - 134431

ER -

Investigation of analog resistive switching dynamics in microwave-assisted Fe₃O₄ based memristor for neuromorphic application

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Keywords

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