Investigation of bipolar resistive switching characteristics in Si 3N4-based RRAM with metal-insulator-silicon structure

Sungjun Kim, Sunghun Jung, Byung Gook Park

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Fab-friendly Ti/Si3N4/p+-Si stacked RRAM device was fabricated. Reproducible bipolar switching occurs under a reasonable operation voltage (<3 V) owing to forming-less process. In addition, self-compliance less than 1 mA is helpful for a circuit design. For high density, the feasibility of multi-level cell (MLC) operation is demonstrated using gradual set/reset during resistance transition.

Original languageEnglish
Pages (from-to)126-134
Number of pages9
JournalInternational Journal of Nanotechnology
Volume11
Issue number1-4
DOIs
StatePublished - 2014

Keywords

  • Forming-less
  • MIS structure
  • Multi-level cell
  • Self-compliance

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