Abstract
Fab-friendly Ti/Si3N4/p+-Si stacked RRAM device was fabricated. Reproducible bipolar switching occurs under a reasonable operation voltage (<3 V) owing to forming-less process. In addition, self-compliance less than 1 mA is helpful for a circuit design. For high density, the feasibility of multi-level cell (MLC) operation is demonstrated using gradual set/reset during resistance transition.
Original language | English |
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Pages (from-to) | 126-134 |
Number of pages | 9 |
Journal | International Journal of Nanotechnology |
Volume | 11 |
Issue number | 1-4 |
DOIs | |
State | Published - 2014 |
Keywords
- Forming-less
- MIS structure
- Multi-level cell
- Self-compliance