Investigation of bipolar resistive switching characteristics in Si 3N4-based RRAM with metal-insulator-silicon structure

Sungjun Kim; Sunghun Jung; Byung Gook Park

doi:10.1504/IJNT.2014.059816

Investigation of bipolar resistive switching characteristics in Si ₃N₄-based RRAM with metal-insulator-silicon structure

Sungjun Kim
, Sunghun Jung
, Byung Gook Park

Department of Electronics & Electrical Engineering

Seoul National University

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Fab-friendly Ti/Si₃N₄/p+-Si stacked RRAM device was fabricated. Reproducible bipolar switching occurs under a reasonable operation voltage (<3 V) owing to forming-less process. In addition, self-compliance less than 1 mA is helpful for a circuit design. For high density, the feasibility of multi-level cell (MLC) operation is demonstrated using gradual set/reset during resistance transition.

Original language	English
Pages (from-to)	126-134
Number of pages	9
Journal	International Journal of Nanotechnology
Volume	11
Issue number	1-4
DOIs	https://doi.org/10.1504/IJNT.2014.059816
State	Published - 2014

Keywords

Forming-less
MIS structure
Multi-level cell
Self-compliance

Access to Document

10.1504/IJNT.2014.059816

Cite this

@article{167e73cb2b904b4182a1f49a360e1d9f,

title = "Investigation of bipolar resistive switching characteristics in Si 3N4-based RRAM with metal-insulator-silicon structure",

abstract = "Fab-friendly Ti/Si3N4/p+-Si stacked RRAM device was fabricated. Reproducible bipolar switching occurs under a reasonable operation voltage (<3 V) owing to forming-less process. In addition, self-compliance less than 1 mA is helpful for a circuit design. For high density, the feasibility of multi-level cell (MLC) operation is demonstrated using gradual set/reset during resistance transition.",

keywords = "Forming-less, MIS structure, Multi-level cell, Self-compliance",

author = "Sungjun Kim and Sunghun Jung and Park, \{Byung Gook\}",

year = "2014",

doi = "10.1504/IJNT.2014.059816",

language = "English",

volume = "11",

pages = "126--134",

journal = "International Journal of Nanotechnology",

issn = "1475-7435",

publisher = "Inderscience Enterprises Ltd",

number = "1-4",

}

TY - JOUR

T1 - Investigation of bipolar resistive switching characteristics in Si 3N4-based RRAM with metal-insulator-silicon structure

AU - Kim, Sungjun

AU - Jung, Sunghun

AU - Park, Byung Gook

PY - 2014

Y1 - 2014

N2 - Fab-friendly Ti/Si3N4/p+-Si stacked RRAM device was fabricated. Reproducible bipolar switching occurs under a reasonable operation voltage (<3 V) owing to forming-less process. In addition, self-compliance less than 1 mA is helpful for a circuit design. For high density, the feasibility of multi-level cell (MLC) operation is demonstrated using gradual set/reset during resistance transition.

AB - Fab-friendly Ti/Si3N4/p+-Si stacked RRAM device was fabricated. Reproducible bipolar switching occurs under a reasonable operation voltage (<3 V) owing to forming-less process. In addition, self-compliance less than 1 mA is helpful for a circuit design. For high density, the feasibility of multi-level cell (MLC) operation is demonstrated using gradual set/reset during resistance transition.

KW - Forming-less

KW - MIS structure

KW - Multi-level cell

KW - Self-compliance

UR - https://www.scopus.com/pages/publications/84898931512

U2 - 10.1504/IJNT.2014.059816

DO - 10.1504/IJNT.2014.059816

M3 - Article

AN - SCOPUS:84898931512

SN - 1475-7435

VL - 11

SP - 126

EP - 134

JO - International Journal of Nanotechnology

JF - International Journal of Nanotechnology

IS - 1-4

ER -

Investigation of bipolar resistive switching characteristics in Si ₃N₄-based RRAM with metal-insulator-silicon structure

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this