Abstract
In this letter, the carrier transport mechanism in a high-mobility zinc oxynitride (ZnON) thin-film transistor (TFT) is investigated by analyzing the gate bias and temperature dependence of conductance and intrinsic field-effect mobility (μFEi) in the subthreshold and above-threshold regions, respectively. The measured drain currents increase with a temperature and show a thermally activated Arrhenius-like behavior in the subthreshold region. The experimental results are well explained using a Meyer-Neldel rule, which suggests that the trap-limited conduction is the dominant carrier transport mechanism in the ZnON TFT in the subthreshold region. The carrier transport mechanism in the ZnON TFT in the above-threshold region is investigated by examining the gate overdrive voltage (VOV) and temperature dependence of μFEi. μFEi extracted from the ZnON TFT decreases with an increase in VOV and temperature, which suggests that the phonon scattering is the most probable mechanism limiting μFEi in the ZnON TFT in the above-threshold region.
Original language | English |
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Article number | 7604108 |
Pages (from-to) | 1570-1573 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 37 |
Issue number | 12 |
DOIs | |
State | Published - Dec 2016 |
Keywords
- Carrier transport mechanism
- Meyer-Neldel rule
- phonon scattering
- trap-limited conduction
- zinc oxynitride thin-film transistor