@inproceedings{3269cac36adf4ba18dda4469f28b6bc4,
title = "Investigation of conduction mechanism in Ti/Si3N 4/p-Si stacked RRAM",
abstract = "The conduction mechanism in Ti/Si3N4/p-Si memory stack is described. In order to analyze the conduction mechanism, we measured the I-V characteristics in voltage sweep mode and conducted I-V curve fitting. And the temperature dependence in Ti/Si3N4/p-Si stacked cell is also investigated because we cannot claim the conduction mechanism just based on the I-V curve fitting. From I-V curve fitting and temperature measurement data, we found that space charge limited conduction (SCLC) model is well fitted in both high resistance state (HRS) and low resistance state (LRS).",
keywords = "RRAM, conduction mechanism and SiN)",
author = "Sunghun Jung and Sungjun Kim and Oh, {Jeong Hoon} and Ryoo, {Kyung Chang} and Lee, {Jong Ho} and Hyungcheol Shin and Park, {Byung Gook}",
year = "2013",
doi = "10.1109/INEC.2013.6465965",
language = "English",
isbn = "9781467348416",
series = "Proceedings - Winter Simulation Conference",
pages = "97--99",
booktitle = "Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013",
note = "2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 ; Conference date: 02-01-2013 Through 04-01-2013",
}