Investigation of interface trap states in TiN/Al2O3/p-Si capacitor by deep level transient spectroscopy

In Sang Jeon; Jaehoo Park; Dail Eom; Cheol Seong Hwang; Hyeong Joon Kim; Chan Jin Park; Hoon Young Cho; Jong Ho Lee; Nae In Lee; Ho Kyu Kang

doi:10.1063/1.1554773

Investigation of interface trap states in TiN/Al₂O₃/p-Si capacitor by deep level transient spectroscopy

In Sang Jeon
, Jaehoo Park
, Dail Eom
, Cheol Seong Hwang
, Hyeong Joon Kim
, Chan Jin Park
, Hoon Young Cho
, Jong Ho Lee
, Nae In Lee
, Ho Kyu Kang

Department of Physics

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

The interface trap density of a TiN/Al₂O₃/p-Si capacitor was investigated using deep level transient spectroscopy (DLTS). The interface state passivation effect of postannealing was also studied using the minority carrier capture process and the DLTS signals. The results indicate that the activation energies of the large peaks detected at higher temperatures with gate bias voltages of 1.8, 1.5, 1.3, and 1.1 V were 0.19, 0.24, 0.29, and 0.37 eV, respectively.

Original language	English
Pages (from-to)	1066-1068
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	7
DOIs	https://doi.org/10.1063/1.1554773
State	Published - 17 Feb 2003

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title = "Investigation of interface trap states in TiN/Al2O3/p-Si capacitor by deep level transient spectroscopy",

abstract = "The interface trap density of a TiN/Al2O3/p-Si capacitor was investigated using deep level transient spectroscopy (DLTS). The interface state passivation effect of postannealing was also studied using the minority carrier capture process and the DLTS signals. The results indicate that the activation energies of the large peaks detected at higher temperatures with gate bias voltages of 1.8, 1.5, 1.3, and 1.1 V were 0.19, 0.24, 0.29, and 0.37 eV, respectively.",

author = "Jeon, \{In Sang\} and Jaehoo Park and Dail Eom and Hwang, \{Cheol Seong\} and Kim, \{Hyeong Joon\} and Park, \{Chan Jin\} and Cho, \{Hoon Young\} and Lee, \{Jong Ho\} and Lee, \{Nae In\} and Kang, \{Ho Kyu\}",

year = "2003",

month = feb,

day = "17",

doi = "10.1063/1.1554773",

language = "English",

volume = "82",

pages = "1066--1068",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Investigation of interface trap states in TiN/Al2O3/p-Si capacitor by deep level transient spectroscopy

AU - Jeon, In Sang

AU - Park, Jaehoo

AU - Eom, Dail

AU - Hwang, Cheol Seong

AU - Kim, Hyeong Joon

AU - Park, Chan Jin

AU - Cho, Hoon Young

AU - Lee, Jong Ho

AU - Lee, Nae In

AU - Kang, Ho Kyu

PY - 2003/2/17

Y1 - 2003/2/17

N2 - The interface trap density of a TiN/Al2O3/p-Si capacitor was investigated using deep level transient spectroscopy (DLTS). The interface state passivation effect of postannealing was also studied using the minority carrier capture process and the DLTS signals. The results indicate that the activation energies of the large peaks detected at higher temperatures with gate bias voltages of 1.8, 1.5, 1.3, and 1.1 V were 0.19, 0.24, 0.29, and 0.37 eV, respectively.

AB - The interface trap density of a TiN/Al2O3/p-Si capacitor was investigated using deep level transient spectroscopy (DLTS). The interface state passivation effect of postannealing was also studied using the minority carrier capture process and the DLTS signals. The results indicate that the activation energies of the large peaks detected at higher temperatures with gate bias voltages of 1.8, 1.5, 1.3, and 1.1 V were 0.19, 0.24, 0.29, and 0.37 eV, respectively.

UR - https://www.scopus.com/pages/publications/0037450274

U2 - 10.1063/1.1554773

DO - 10.1063/1.1554773

M3 - Article

AN - SCOPUS:0037450274

SN - 0003-6951

VL - 82

SP - 1066

EP - 1068

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Investigation of interface trap states in TiN/Al₂O₃/p-Si capacitor by deep level transient spectroscopy

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