Abstract
We investigate the low-frequency noise (LFN) properties of amorphous zinc oxynitride (a-ZnON) thin-film transistors (TFTs) exhibiting high field-effect mobilities ranging from 48.5 to 118.9 cm2/V · s, depending on the gas flow rates during the deposition process. The measured noise power spectral density of the drain current shows that the LFN in a-ZnON TFTs obeys the classical 1/ f noise theory, i.e., it is proportional to 1/ f γ with γ~1 in the frequency range from 10 Hz to 1 kHz. The LFN from the a-ZnON TFT is successfully interpreted by the correlated number fluctuation-mobility fluctuation model. The near-interface dielectric trap density (NT ) and the Coulomb scattering coefficient (αS) extracted from the measured LFN in a-ZnON TFTs are similar to those from the previously reported values for amorphous indium-gallium-zinc oxide TFTs. The relatively large values of NT and αS from the a-ZnON TFTs formed under O2-rich environment are mainly attributed to the high degree of disorder of the a-ZnON channel layer caused by the energetically broad and high density of subgap tail states.
Original language | English |
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Article number | 7458800 |
Pages (from-to) | 739-742 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 37 |
Issue number | 6 |
DOIs | |
State | Published - Jun 2016 |
Keywords
- a-ZnON TFTs
- correlated number fluctuation-mobility fluctuation model
- low-frequency noise
- O flow rate