Investigation of Low-Frequency Noise Properties in High-Mobility ZnON Thin-Film Transistors

Chan Yong Jeong, Hee Joong Kim, Dae Hwan Kim, Hyun Suk Kim, Eok Su Kim, Tae Sang Kim, Joon Seok Park, Jong Baek Seon, Kyoung Seok Son, Sunhee Lee, Seong Ho Cho, Young Soo Park, Dae Hwan Kim, Hyuck In Kwon

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We investigate the low-frequency noise (LFN) properties of amorphous zinc oxynitride (a-ZnON) thin-film transistors (TFTs) exhibiting high field-effect mobilities ranging from 48.5 to 118.9 cm2/V · s, depending on the gas flow rates during the deposition process. The measured noise power spectral density of the drain current shows that the LFN in a-ZnON TFTs obeys the classical 1/ f noise theory, i.e., it is proportional to 1/ f γ with γ~1 in the frequency range from 10 Hz to 1 kHz. The LFN from the a-ZnON TFT is successfully interpreted by the correlated number fluctuation-mobility fluctuation model. The near-interface dielectric trap density (NT ) and the Coulomb scattering coefficient (αS) extracted from the measured LFN in a-ZnON TFTs are similar to those from the previously reported values for amorphous indium-gallium-zinc oxide TFTs. The relatively large values of NT and αS from the a-ZnON TFTs formed under O2-rich environment are mainly attributed to the high degree of disorder of the a-ZnON channel layer caused by the energetically broad and high density of subgap tail states.

Original languageEnglish
Article number7458800
Pages (from-to)739-742
Number of pages4
JournalIEEE Electron Device Letters
Volume37
Issue number6
DOIs
StatePublished - Jun 2016

Keywords

  • a-ZnON TFTs
  • correlated number fluctuation-mobility fluctuation model
  • low-frequency noise
  • O flow rate

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