Investigation of resistive switching dynamics in e-beam evaporated P-type tin-oxide based cross-cell memristor for synaptic and memory application

Chandra Prakash Singh; Vivek Pratap Singh; Harsh Ranjan; Saurabh Kumar Pandey

doi:10.1016/j.matlet.2023.135156

Investigation of resistive switching dynamics in e-beam evaporated P-type tin-oxide based cross-cell memristor for synaptic and memory application

Chandra Prakash Singh, Vivek Pratap Singh, Harsh Ranjan, Saurabh Kumar Pandey

Department of Advanced Battery Convergence Engineering

Indian Institute of Technology Patna

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

In this letter, we have examined the gradual and abrupt resistive switching (RS) dynamics in E-beam evaporated P-type Tin-oxide based cross-cell memristor by adjusting the DC voltage sweep, and it has been used for synaptic and memory application, respectively. We have observed gradual RS dynamics at low DC sweeping voltage (+0.5 V/-0.5 V) and we have also studied its synaptic behavior (Potentiation/Depression) at different read voltage and pulse widths to optimize its synaptic performance. As well as we have also observed abrupt RS dynamics at high DC sweeping voltage (+1.5 V/-1.5 V) and utilized it as a memory element. The proposed device shows a good Switching window (∼10²) up to 20 K times read/write operation without any considerable degradation at an optimized read voltage (0.5 V) and we have also studied data retention property for 10⁵ sec at 85 °C.

Original language	English
Article number	135156
Journal	Materials Letters
Volume	352
DOIs	https://doi.org/10.1016/j.matlet.2023.135156
State	Published - 1 Dec 2023

Keywords

Deposition
Electrical Properties
Semiconductors
Thin film

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title = "Investigation of resistive switching dynamics in e-beam evaporated P-type tin-oxide based cross-cell memristor for synaptic and memory application",

abstract = "In this letter, we have examined the gradual and abrupt resistive switching (RS) dynamics in E-beam evaporated P-type Tin-oxide based cross-cell memristor by adjusting the DC voltage sweep, and it has been used for synaptic and memory application, respectively. We have observed gradual RS dynamics at low DC sweeping voltage (+0.5 V/-0.5 V) and we have also studied its synaptic behavior (Potentiation/Depression) at different read voltage and pulse widths to optimize its synaptic performance. As well as we have also observed abrupt RS dynamics at high DC sweeping voltage (+1.5 V/-1.5 V) and utilized it as a memory element. The proposed device shows a good Switching window (∼102) up to 20 K times read/write operation without any considerable degradation at an optimized read voltage (0.5 V) and we have also studied data retention property for 105 sec at 85 °C.",

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doi = "10.1016/j.matlet.2023.135156",

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T1 - Investigation of resistive switching dynamics in e-beam evaporated P-type tin-oxide based cross-cell memristor for synaptic and memory application

AU - Singh, Chandra Prakash

AU - Singh, Vivek Pratap

AU - Ranjan, Harsh

AU - Pandey, Saurabh Kumar

PY - 2023/12/1

Y1 - 2023/12/1

N2 - In this letter, we have examined the gradual and abrupt resistive switching (RS) dynamics in E-beam evaporated P-type Tin-oxide based cross-cell memristor by adjusting the DC voltage sweep, and it has been used for synaptic and memory application, respectively. We have observed gradual RS dynamics at low DC sweeping voltage (+0.5 V/-0.5 V) and we have also studied its synaptic behavior (Potentiation/Depression) at different read voltage and pulse widths to optimize its synaptic performance. As well as we have also observed abrupt RS dynamics at high DC sweeping voltage (+1.5 V/-1.5 V) and utilized it as a memory element. The proposed device shows a good Switching window (∼102) up to 20 K times read/write operation without any considerable degradation at an optimized read voltage (0.5 V) and we have also studied data retention property for 105 sec at 85 °C.

AB - In this letter, we have examined the gradual and abrupt resistive switching (RS) dynamics in E-beam evaporated P-type Tin-oxide based cross-cell memristor by adjusting the DC voltage sweep, and it has been used for synaptic and memory application, respectively. We have observed gradual RS dynamics at low DC sweeping voltage (+0.5 V/-0.5 V) and we have also studied its synaptic behavior (Potentiation/Depression) at different read voltage and pulse widths to optimize its synaptic performance. As well as we have also observed abrupt RS dynamics at high DC sweeping voltage (+1.5 V/-1.5 V) and utilized it as a memory element. The proposed device shows a good Switching window (∼102) up to 20 K times read/write operation without any considerable degradation at an optimized read voltage (0.5 V) and we have also studied data retention property for 105 sec at 85 °C.

KW - Deposition

KW - Electrical Properties

KW - Semiconductors

KW - Thin film

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DO - 10.1016/j.matlet.2023.135156

M3 - Article

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SN - 0167-577X

VL - 352

JO - Materials Letters

JF - Materials Letters

M1 - 135156

ER -

Investigation of resistive switching dynamics in e-beam evaporated P-type tin-oxide based cross-cell memristor for synaptic and memory application

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Keywords

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