Investigation of stability in polymer thin film transistors for flexible active-matrix displays

Y. H. Kim; S. K. Park; J. I. Han; D. G. Moon; W. K. Kim

doi:10.1117/12.545322

Investigation of stability in polymer thin film transistors for flexible active-matrix displays

Y. H. Kim, S. K. Park, J. I. Han, D. G. Moon, W. K. Kim

Department of Chemical and Biochemical Engineering

Korea Electronics Technology Institute

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We investigated the electrical stability of polythiophene-based organic thin film transistors (OTFTs). The electrical properties of a thin film transistor such as field effect mobility, threshold voltage and on/off current changed vastly when exposed to air. In order to analyze the stability of the transistor, electrical properties were first measured in vacuum for several hours, then air or oxygen gas was introduced and the changes in the electrical properties were observed. Device showed a decrease in field effect mobility from 10^-3 cm²/V·s to 10^-5 cm ²/V·s after exposure to air and the on/off ratio was also changed from 10³ to 10¹.

Original language	English
Pages (from-to)	298-305
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5464
DOIs	https://doi.org/10.1117/12.545322
State	Published - 2004
Event	Organic Optoelectronics and Photonics - Strasbourg, France Duration: 28 Apr 2004 → 30 Apr 2004

Keywords

Flexible display
P3HT
Polymer thin film transistor
Stability

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10.1117/12.545322

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title = "Investigation of stability in polymer thin film transistors for flexible active-matrix displays",

abstract = "We investigated the electrical stability of polythiophene-based organic thin film transistors (OTFTs). The electrical properties of a thin film transistor such as field effect mobility, threshold voltage and on/off current changed vastly when exposed to air. In order to analyze the stability of the transistor, electrical properties were first measured in vacuum for several hours, then air or oxygen gas was introduced and the changes in the electrical properties were observed. Device showed a decrease in field effect mobility from 10-3 cm2/V·s to 10-5 cm 2/V·s after exposure to air and the on/off ratio was also changed from 103 to 101.",

keywords = "Flexible display, P3HT, Polymer thin film transistor, Stability",

author = "Kim, {Y. H.} and Park, {S. K.} and Han, {J. I.} and Moon, {D. G.} and Kim, {W. K.}",

year = "2004",

doi = "10.1117/12.545322",

language = "English",

volume = "5464",

pages = "298--305",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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publisher = "SPIE",

note = "Organic Optoelectronics and Photonics ; Conference date: 28-04-2004 Through 30-04-2004",

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TY - JOUR

T1 - Investigation of stability in polymer thin film transistors for flexible active-matrix displays

AU - Kim, Y. H.

AU - Park, S. K.

AU - Han, J. I.

AU - Moon, D. G.

AU - Kim, W. K.

PY - 2004

Y1 - 2004

N2 - We investigated the electrical stability of polythiophene-based organic thin film transistors (OTFTs). The electrical properties of a thin film transistor such as field effect mobility, threshold voltage and on/off current changed vastly when exposed to air. In order to analyze the stability of the transistor, electrical properties were first measured in vacuum for several hours, then air or oxygen gas was introduced and the changes in the electrical properties were observed. Device showed a decrease in field effect mobility from 10-3 cm2/V·s to 10-5 cm 2/V·s after exposure to air and the on/off ratio was also changed from 103 to 101.

AB - We investigated the electrical stability of polythiophene-based organic thin film transistors (OTFTs). The electrical properties of a thin film transistor such as field effect mobility, threshold voltage and on/off current changed vastly when exposed to air. In order to analyze the stability of the transistor, electrical properties were first measured in vacuum for several hours, then air or oxygen gas was introduced and the changes in the electrical properties were observed. Device showed a decrease in field effect mobility from 10-3 cm2/V·s to 10-5 cm 2/V·s after exposure to air and the on/off ratio was also changed from 103 to 101.

KW - Flexible display

KW - P3HT

KW - Polymer thin film transistor

KW - Stability

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U2 - 10.1117/12.545322

DO - 10.1117/12.545322

M3 - Conference article

AN - SCOPUS:10044241735

SN - 0277-786X

VL - 5464

SP - 298

EP - 305

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Organic Optoelectronics and Photonics

Y2 - 28 April 2004 through 30 April 2004

ER -

Investigation of stability in polymer thin film transistors for flexible active-matrix displays

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