Investigation on mechanism for instability under drain current stress in amorphous Si-In-Zn-O thin-film transistors

Do Hyung Kim, Hyun Kwang Jung, Woochul Yang, Dae Hwan Kim, Sang Yeol Lee

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

The mechanism for instability against positive bias stress (PBS) in amorphous Si-In-Zn-O (SIZO) thin-film transistors has been investigated by analyzing the subgap density of states (DOSs), which was extracted from multi-frequency method using direct capacitance-voltage measurements. It was found that DOSs including shallow tail states and deep trap states are constant in density as PBS time increases. It indicates that the bulk traps in the SIZO channel layer and the channel/dielectric interfacial traps are not created during the PBS duration. Therefore, the instability against PBS in SIZO thin-film transistors is attributed to the charge trapping by the acceptor-like DOSs.

Original languageEnglish
Pages (from-to)314-317
Number of pages4
JournalThin Solid Films
Volume527
DOIs
StatePublished - 1 Jan 2013

Keywords

  • Density of states
  • Instability
  • Keywords
  • Si-In-Zn-O
  • Thin-film transistors

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