@inproceedings{860cb64c381f4ea999d0b7b7289974b1,
title = "Investigation on the RRAM overshoot current suppression with circuit simulation",
abstract = "In this paper, we have simulated how the overshoot current in the Resistive-switching Random Access Memory (RRAM) cell is generated and whether the integrated transistor can effectively suppress the overshoot current that can cause degradation of cell endurance. We propose a CMOS-friendly 1T1R fabrication process and proceed with circuit simulation using the process parameters. The simulation shows that the internal transistor effectively prevent RRAM overshoot current and be capable of controlling the compliance current.",
author = "Suyun Bang and Sungjun Kim and Kim, {Min Hwi} and Kim, {Tae Hyeon} and Lee, {Dong Keun} and Park, {Byung Gook}",
note = "Publisher Copyright: {\textcopyright} 2017 JSAP.; 22nd Silicon Nanoelectronics Workshop, SNW 2017 ; Conference date: 04-06-2017 Through 05-06-2017",
year = "2017",
month = dec,
day = "29",
doi = "10.23919/SNW.2017.8242307",
language = "English",
series = "2017 Silicon Nanoelectronics Workshop, SNW 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "81--82",
booktitle = "2017 Silicon Nanoelectronics Workshop, SNW 2017",
address = "United States",
}