TY - JOUR
T1 - Investigations on Fe doped SnS thin films by nebulizer spray pyrolysis technique for solar cell applications
AU - Sebastian, S.
AU - Kulandaisamy, I.
AU - Valanarasu, S.
AU - Soundaram, N.
AU - Paulraj, K.
AU - Vikraman, Dhanasekaran
AU - Kim, Hyun Seok
N1 - Publisher Copyright:
© Springer Science+Business Media, LLC, part of Springer Nature 2019.
PY - 2019/4
Y1 - 2019/4
N2 - Undoped and different concentrations of iron (Fe) doped tin sulphide (SnS) thin films were coated by nebulizer spray pyrolysis method with the substrate temperature of 350 °C. Polycrystalline nature of orthorhombic crystal structured pure and Fe doped SnS (Fe:SnS) thin films confirmed by X-ray diffraction (XRD) patterns. Structural studies further explored the preferential orientation of (201) plane for undoped SnS and their shifts to (400) and (111) directions for Fe:SnS at 6 and 10 wt. % of Fe concentration, respectively. The versatile route of structural modification has obviously demonstrated due to inclusion of Fe doping in SnS. Raman spectra further confirmed the structural variation of Fe:SnS. Topological variations obviously explained by atomic force microscopy images for pure and Fe:SnS. Optical results evidently claimed the deterioration of band gap values from 1.96 to 1.58 eV due to increase of Fe doping concentrations from 0 to 10 wt. %, respectively. Luminescence spectra showed a strong emission peak centered at 772 nm and low resistivity 3.32 x 10-2 Ω cm with the high carrier concentration for 8 wt. % of Fe concentration using prepared Fe:SnS film. The fabricated solar cell device with n-CdS exposed the 0.18% of efficiency for p-Fe:SnS prepared using 8 wt. % Fe concentration.
AB - Undoped and different concentrations of iron (Fe) doped tin sulphide (SnS) thin films were coated by nebulizer spray pyrolysis method with the substrate temperature of 350 °C. Polycrystalline nature of orthorhombic crystal structured pure and Fe doped SnS (Fe:SnS) thin films confirmed by X-ray diffraction (XRD) patterns. Structural studies further explored the preferential orientation of (201) plane for undoped SnS and their shifts to (400) and (111) directions for Fe:SnS at 6 and 10 wt. % of Fe concentration, respectively. The versatile route of structural modification has obviously demonstrated due to inclusion of Fe doping in SnS. Raman spectra further confirmed the structural variation of Fe:SnS. Topological variations obviously explained by atomic force microscopy images for pure and Fe:SnS. Optical results evidently claimed the deterioration of band gap values from 1.96 to 1.58 eV due to increase of Fe doping concentrations from 0 to 10 wt. %, respectively. Luminescence spectra showed a strong emission peak centered at 772 nm and low resistivity 3.32 x 10-2 Ω cm with the high carrier concentration for 8 wt. % of Fe concentration using prepared Fe:SnS film. The fabricated solar cell device with n-CdS exposed the 0.18% of efficiency for p-Fe:SnS prepared using 8 wt. % Fe concentration.
UR - http://www.scopus.com/inward/record.url?scp=85063199886&partnerID=8YFLogxK
U2 - 10.1007/s10854-019-01124-3
DO - 10.1007/s10854-019-01124-3
M3 - Article
AN - SCOPUS:85063199886
SN - 0957-4522
VL - 30
SP - 8024
EP - 8034
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 8
ER -