Abstract
We studied the midgap levels by using isothermal capacitance transient spectroscopy (ICTS) in Hb-GaAs which had been processed by rapid thermal annealing (RTA). As the annealing time at 850 °C increased, the EL2 trap (Ec-0.81 eV) was transformed to the EX2 trap (Ec-0.73 eV) and eventually to the EX1 trap (Ec-0.87 eV). The diffusivity of the EL2 trap obtained from the experimental result of the heat treatment was about 1.02·10-8cm2/s at 850 °C. This result indicate that the EL2 trap contains an interstitial arsenic atom. The result of the transformation to the EX1 and EX2 traps suggests that, when the EL2 trap is VAsASiVGaAsGa, the EX2 trap may be VAsVGaAsGa, which Asi is diffused out during a thermal annealing.
Original language | English |
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Pages (from-to) | 359-363 |
Number of pages | 5 |
Journal | Applied Physics A: Solids and Surfaces |
Volume | 48 |
Issue number | 4 |
DOIs | |
State | Published - Apr 1989 |
Keywords
- 61.70At
- 71.55-i