Isothermal capacitance transient spectroscopy (ICTS) study for midgap levels in Hb-GaAs by rapid thermal annealing

Hoon Young Cho, Eun Kyu Kim, Suk Ki Min, Sung Ho Choh

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Abstract

We studied the midgap levels by using isothermal capacitance transient spectroscopy (ICTS) in Hb-GaAs which had been processed by rapid thermal annealing (RTA). As the annealing time at 850 °C increased, the EL2 trap (Ec-0.81 eV) was transformed to the EX2 trap (Ec-0.73 eV) and eventually to the EX1 trap (Ec-0.87 eV). The diffusivity of the EL2 trap obtained from the experimental result of the heat treatment was about 1.02·10-8cm2/s at 850 °C. This result indicate that the EL2 trap contains an interstitial arsenic atom. The result of the transformation to the EX1 and EX2 traps suggests that, when the EL2 trap is VAsASiVGaAsGa, the EX2 trap may be VAsVGaAsGa, which Asi is diffused out during a thermal annealing.

Original languageEnglish
Pages (from-to)359-363
Number of pages5
JournalApplied Physics A: Solids and Surfaces
Volume48
Issue number4
DOIs
StatePublished - Apr 1989

Keywords

  • 61.70At
  • 71.55-i

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