Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method

Sajjad Hussain, Jai Singh, Dhanasekaran Vikraman, Arun Kumar Singh, Muhammad Zahir Iqbal, Muhammad Farooq Khan, Pushpendra Kumar, Dong Chul Choi, Wooseok Song, Ki Seok An, Jonghwa Eom, Wan Gyu Lee, Jongwan Jung

Research output: Contribution to journalArticlepeer-review

117 Scopus citations

Abstract

We report a simple and mass-scalable approach for thin MoS2 films via RF sputtering combined with the post-deposition annealing process. We have prepared as-sputtered film using a MoS 2 target in the sputtering system. The as-sputtered film was subjected to post-deposition annealing to improve crystalline quality at 700 °C in a sulfur and argon environment. The analysis confirmed the growth of continuous bilayer to few-layer MoS2 film. The mobility value of ∼29 cm2/Vs and current on/off ratio on the order of ∼104 were obtained for bilayer MoS2. The mobility increased up to ∼173-181 cm2/Vs, respectively, for few-layer MoS2. The mobility of our bilayer MoS2 FETs is larger than any previously reported values of single to bilayer MoS2 grown on SiO 2/Si substrate with a SiO2 gate oxide. Moreover, our few-layer MoS2 FETs exhibited the highest mobility value ever reported for any MoS2 FETs with a SiO2 gate oxide. It is presumed that the high mobility behavior of our film could be attributed to low charged impurities of our film and dielectric screening effect by an interfacial MoOxSiy layer. The combined preparation route of RF sputtering and post-deposition annealing process opens up the novel possibility of mass and batch production of MoS2 film.

Original languageEnglish
Article number30791
JournalScientific Reports
Volume6
DOIs
StatePublished - 5 Aug 2016

Fingerprint

Dive into the research topics of 'Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method'. Together they form a unique fingerprint.

Cite this