@inproceedings{0fd11e912a274df587383677bdde9492,
title = "Lateral conduction mid-infrared photodetectors using self-assembled Ge/Si quantum dots",
abstract = "We have investigated a lateral conduction midinfrared photodetectors by using photoionization of holes in the self-assembled Ge/Si quantum dots. A broad mid-infrared photocurrent spectrum was observed in photon energy range of 120-400 meV due to intersubband transition in the valence band of self-assembled Ge quantum dots. The peak responsivity was 134 mA/W at photon energy range of 240 meV at T=10 K.",
keywords = "Ge quantum dot, Infrared photodetector, Photocurrent",
author = "Lee, {S. W.} and Kim, {T. G.} and K. Hirakawa and Kim, {J. S.} and Cho, {H. Y.}",
year = "2006",
doi = "10.1109/NMDC.2006.4388883",
language = "English",
isbn = "1424405408",
series = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",
pages = "520--521",
booktitle = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",
note = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC ; Conference date: 22-10-2006 Through 25-10-2006",
}