Leakage transport in the high-resistance state of a resistive-switching NbOx thin film prepared by pulsed laser deposition

Kyooho Jung, Y. Kim, Hyunsik Im, Hyungsang Kim, Baeho Park

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

We have investigated leakage conduction transport in an amorphous resistive-switching NbOx thin film sandwiched between Pt electrodes. The film was grown using a pulsed laser deposition technique, and showed unipolar-type resistance switching characteristics. The current-voltage characteristics in the initial insulating resistance state (IS) and in the bistable high-resistance state (HRS) were modeled by using various leakage conduction mechanisms. The electroforming forming process causes dominant conduction mechanisms in the IS and the HRS to differ. Thermionic emission is observed both in the IS and the HRS, but the thermal activation energy in the HRS is smaller.

Original languageEnglish
Pages (from-to)2778-2781
Number of pages4
JournalJournal of the Korean Physical Society
Volume59
Issue number4
DOIs
StatePublished - 14 Oct 2011

Keywords

  • Leakage conduction
  • Niobium oxide
  • Resistive switching

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