Abstract
The class of organic-inorganic lead halides with perovskite crystal structures has recently emerged as promising materials for a variety of practical optoelectronic applications. In particular, hybrid halide perovskite quantum dots possess excellent intrinsic optoelectronic properties such as high color purity (full width at half-maximum of 24.59 nm) and photoluminescence quantum yields (92.7%). In this work, we demonstrate the use of perovskite quantum dot materials as an emissive layer of hybrid light-emitting transistors. To investigate the working mechanism of perovskite quantum dots in light-emitting transistors, we investigated the electrical and optical characteristics under both p-channel and n-channel operation. Using these materials, we have achieved perovskite quantum dot light-emitting transistors with high electron mobilities of up to 12.06 cm2·V-1 s-1, high brightness of up to 1.41 × 104 cd m-2, and enhanced external quantum efficiencies of up to 1.79% operating at a source-drain potential of 40 V.
Original language | English |
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Pages (from-to) | 35175-35180 |
Number of pages | 6 |
Journal | ACS Applied Materials and Interfaces |
Volume | 12 |
Issue number | 31 |
DOIs | |
State | Published - 5 Aug 2020 |
Keywords
- light-emitting transistors
- organic-inorganic halide perovskite
- quantum dot
- super yellow
- zinc-oxynitride