Low frequency and microwave performances of Ba0.6Sr 0.4TiO3 films on atomic layer deposited TiO 2/high resistivity Si substrates

Hyun Suk Kim, Il Doo Kim, Ki Byoung Kim, Tae Soon Yun, Jong Chul Lee, Harry L. Tuller, Won Youl Choi, Ho Gi Kim

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We report on high tunablity of Ba0.6Sr0.4TiO 3 (BST) thin films realized through the use of atomic layer deposited TiO2 films as a microwave buffer layer between BST and a high resistivity (HR) Si substrate. Coplanar waveguide (CPW) meander-line phase shifters using BST/TiO2/HR-Si and BST/MgO structures exhibited a differential phase shift of 95° and 24.4°, respectively, at 15 GHz under an electric field of 10 kV/cm. The figure of merit of the phase shifters at 15 GHz was 30.6°/dB for BST film grown on a TiO2/HR-Si substrate and 12.2°/dB for BST film grown on a MgO single crystal substrate. These results constitute significant progress in integrating BST films with conventional silicon technology.

Original languageEnglish
Pages (from-to)421-425
Number of pages5
JournalJournal of Electroceramics
Volume17
Issue number2-4
DOIs
StatePublished - Dec 2006

Keywords

  • BST
  • Buffer layer
  • Coplanar waveguide
  • Phase shifter

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