Low-frequency charge noise in suspended aluminum single-electron transistors

T. F. Li, Yu A. Pashkin, O. Astafiev, Y. Nakamura, J. S. Tsai, H. Im

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

The authors have developed a fabrication method for suspended metallic single-electron transistors (SETs) utilizing a combination of conventional angle evaporation technique and ashing of the underlying organic polymer. The authors' Al-based suspended devices exhibit clear Coulomb blockade effects typical for conventional SETs. The measured low-frequency charge noise is rather low but still within the range reported for conventional Al devices. We suggest that the noise level can be further reduced by decreasing the effective SET temperature.

Original languageEnglish
Article number033107
JournalApplied Physics Letters
Volume91
Issue number3
DOIs
StatePublished - 2007

Fingerprint

Dive into the research topics of 'Low-frequency charge noise in suspended aluminum single-electron transistors'. Together they form a unique fingerprint.

Cite this