Abstract
Low frequency noise in the two-dimensional metal-semiconductor field effect transistor (2D-MESFET) is reported. It is shown that the noise level S is rather small. At room temperature the value of Hooge constant α was about 2×10-5 for frequency f=20 Hz. The frequency dependence of the relative spectral density of current fluctuations SI/I2 at 300 K was close to S∼1/f0.6 in the frequency range 20 Hz-20 kHz. Two local maxima were observed in the temperature dependence of S in the ranges 100-180 K and 200-300 K.
Original language | English |
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Pages (from-to) | 3138 |
Number of pages | 1 |
Journal | Applied Physics Letters |
DOIs | |
State | Published - 1995 |