Low frequency noise in two-dimensional metal-semiconductor field effect transistor

M. E. Levinshtein, S. L. Rumyantsev, G. S. Simin, H. Park, W. C.B. Peatman, M. S. Shur

Research output: Contribution to journalArticlepeer-review

Abstract

Low frequency noise in the two-dimensional metal-semiconductor field effect transistor (2D-MESFET) is reported. It is shown that the noise level S is rather small. At room temperature the value of Hooge constant α was about 2×10-5 for frequency f=20 Hz. The frequency dependence of the relative spectral density of current fluctuations SI/I2 at 300 K was close to S∼1/f0.6 in the frequency range 20 Hz-20 kHz. Two local maxima were observed in the temperature dependence of S in the ranges 100-180 K and 200-300 K.

Original languageEnglish
Pages (from-to)3138
Number of pages1
JournalApplied Physics Letters
DOIs
StatePublished - 1995

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