Abstract
We have designed and fabricated a low LO power V-band CPW mixer using GaAs PHEMT technology for the application of millimeter-wave wireless communication systems. The mixer was designed using a unique gate mixing architecture to achieve simultaneously a low LO input power, a high conversion gain, and good LO-RF isolation characteristics. The V-band mixer was fabricated using the MIMIC process including 0.1-? GaAs PHEMTs and CPW transmission lines. The V-band mixer exhibited a high conversion gain of 2 dB at a low LO power of 0 dBm. The low LO power and the high conversion gain achieved in this work is among the best ever reported for a V-band mixer.
Original language | English |
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DOIs | |
State | Published - 2002 |
Event | 2002 32nd European Microwave Conference, EuMC 2002 - Milan, Italy Duration: 23 Sep 2002 → 26 Sep 2002 |
Conference
Conference | 2002 32nd European Microwave Conference, EuMC 2002 |
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Country/Territory | Italy |
City | Milan |
Period | 23/09/02 → 26/09/02 |