Abstract
Low temperature processed Perovskite solar cells (PSCs) are popular due to their potential for scalable production. In this work, we report reduced Graphene Oxide (r-GO)/copper (I) thiocyanate (CuSCN) as an efficient bilayer hole transport layer (HTL) for low temperature processed inverted planar PSCs. We have systematically optimized the thickness of CuSCN interlayer at the r-GO/MAPbI3 interface resulting in bilayer HTL structure to enhance the stability and photovoltaic performance of low temperature processed r-GO HTL based PSCs with a standard surface area of 1.02 cm2. With matched valence band energy level, the r-GO/CuSCN bilayer HTL based PSCs showed high power conversion efficiency of 14.28%, thanks to the improved open circuit voltage (VOC) compared to the only r-GO based PSC. Moreover, enhanced stability has been observed for the r-GO/CuSCN based PSCs which retained over 90% of its initial efficiency after 100 h light soaking measured under continuous AM 1.5 sun illumination.
Original language | English |
---|---|
Pages (from-to) | 652-657 |
Number of pages | 6 |
Journal | Solar Energy |
Volume | 171 |
DOIs | |
State | Published - 1 Sep 2018 |
Keywords
- Copper (I) thiocyanate
- Hole-transport bilayer
- Perovskite solar cell
- Reduced graphene oxide
- Stability