@inproceedings{35ff72eb52464926ad9f1f43af569cc7,
title = "Low-temperature sol-gel derived ultra-flexible metal-oxide thin-film-transistors and their applications",
abstract = "Solution-processed metal-oxide thin-film transistors (TFTs) were fabricated for flexible integrated circuits. As gate dielectric layer, a transparent insulating oxide, ZAO (Zirconium incorporated aluminum oxide) has been employed instead of using pristine AlOx (Aluminum oxide). Using the ZAO gate dielectric, field-effect mobility of 6.21 cm2/Vs and hysteresis-free property have achieved by improving the interface between the gate dielectric and the IGZO (Indium gallium zinc oxide) semiconductor layer. For the surface modification, a heterogeneous ZAO gate dielectric has been used. With the IGZO TFTs employing ZAO gate dielectric, an ultra-flexible 7-stage ring-oscillator array was fabricated.",
author = "Jo, {Jeong Wan} and Heo, {Jae Sang} and Kim, {Kyung Tae} and Jaehyun Kim and Kim, {Myung Gil} and Park, {Sung Kyu}",
note = "Publisher Copyright: {\textcopyright} 2016 The Electrochemical Society.; Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting ; Conference date: 02-10-2016 Through 07-10-2016",
year = "2016",
doi = "10.1149/07510.0123ecst",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "10",
pages = "123--126",
editor = "Y. Kuo",
booktitle = "Thin Film Transistors 13, TFT 13",
address = "United States",
edition = "10",
}