Abstract
In this study, we report on the fabrication of a low-voltage-driven bottom-gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor with a high-k oxide/polymer double-layer dielectric on a glass substrate. The hybrid double-layer dielectric was formed through a sequential process of e-beam evaporation of 300-nm-thick amorphous high-k oxide (SiO2-CeO 2 mixture) and spin coating of poly(4-vinylphenol) (PVP). The channel layer was deposited by rf magnetron cosputtering with InGaZO4 and ZnO dual targets at room temperature in argon and oxygen mixed-gas atmosphere. The room-temperature-deposited a-IGZO channel with the hybrid double-layer dielectric exhibits the operating characteristics of a threshold voltage of 1.7 V, drain-source current on/off modulation ratio (Ion/Ioff) of ∼2.9 × 104, and field effect mobility of 0.97 cm 2 V-1 s-1 at 5 V.
Original language | English |
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Pages (from-to) | 4096-4098 |
Number of pages | 3 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 46 |
Issue number | 7 A |
DOIs | |
State | Published - 4 Jul 2007 |
Keywords
- A-IGZO
- Amorphous transparent TFT
- Inorganic-organic gate dielectric