Low voltage operating InGaZn O4 thin film transistors using high- k MgO- Ba0.6 Sr0.4 Ti O3 composite gate dielectric on plastic substrate

The authors report on the dielectric and leakage current properties of room temperature grown MgO- Ba0.6 Sr0.4 Ti O3 (MgO-BST) composite thin films to be utilized InGaZn O4 thin films transistors (TFTs) fabricated on a polyethylene terephthalate (PET) substrate. The InGaZn O4 TFTs with MgO-BST gate dielectrics exhibited low operation voltage of 4 V, high on/off current ratio of 4.13× 106, and high field effect mobility of 10.86 cm2 V s. These results verify that a room temperature grown MgO-BST gate dielectric is a good candidate for producing high performance InGaZn O4 TFTs on plastic substrates.